STMicroelectronics STFW4 Type N-Channel MOSFET, 4 A, 1500 V Enhancement, 3-Pin TO-3PF
- RS Stock No.:
- 151-933
- Mfr. Part No.:
- STFW4N150
- Brand:
- STMicroelectronics
Bulk discount available
View bulk pricing optionsSubtotal (1 unit)*
Kr. 74,36
(exc. VAT)
Kr. 92,95
(inc. VAT)
FREE delivery for online orders over 750,00 kr
In Stock
- Plus 30 unit(s) shipping from 20 July 2026
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Units | Per unit |
|---|---|
| 1 - 9 | Kr. 74,36 |
| 10 - 99 | Kr. 43,47 |
| 100 + | Kr. 36,61 |
*price indicative
- RS Stock No.:
- 151-933
- Mfr. Part No.:
- STFW4N150
- Brand:
- STMicroelectronics
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | STMicroelectronics | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 4A | |
| Maximum Drain Source Voltage Vds | 1500V | |
| Package Type | TO-3PF | |
| Series | STFW4 | |
| Mount Type | Through Hole | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 6Ω | |
| Channel Mode | Enhancement | |
| Minimum Operating Temperature | -55°C | |
| Forward Voltage Vf | 2V | |
| Typical Gate Charge Qg @ Vgs | 29nC | |
| Maximum Operating Temperature | 150°C | |
| Standards/Approvals | RoHS | |
| Height | 44mm | |
| Length | 44mm | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand STMicroelectronics | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 4A | ||
Maximum Drain Source Voltage Vds 1500V | ||
Package Type TO-3PF | ||
Series STFW4 | ||
Mount Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 6Ω | ||
Channel Mode Enhancement | ||
Minimum Operating Temperature -55°C | ||
Forward Voltage Vf 2V | ||
Typical Gate Charge Qg @ Vgs 29nC | ||
Maximum Operating Temperature 150°C | ||
Standards/Approvals RoHS | ||
Height 44mm | ||
Length 44mm | ||
Automotive Standard No | ||
- COO (Country of Origin):
- KR
The STMicroelectronics Power MOSFET is designed using the consolidated strip layout based MESH OVERLAY process. The result is a product that matches or improves on the performance of comparable standard parts from other manufacturers.
100% avalanche tested
Intrinsic capacitances and Qg minimized
High speed switching
Fully isolated TO 3PF plastic package
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