Nexperia NextPower-S3 Schottky-Plus technology Type N-Channel MOSFET, 290 A, 40 V Enhancement, 5-Pin LFPAK

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Subtotal (1 reel of 1500 units)*

Kr.52 314 00 

(exc. VAT)

Kr.65 392 50 

(inc. VAT)

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1500 +Kr. 34,876Kr. 52 314,00

*price indicative

RS Stock No.:
219-337
Mfr. Part No.:
PSMN1R0-40YSHX
Brand:
Nexperia
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Brand

Nexperia

Channel Type

Type N

Product Type

MOSFET

Maximum Continuous Drain Current Id

290A

Maximum Drain Source Voltage Vds

40V

Package Type

LFPAK

Series

NextPower-S3 Schottky-Plus technology

Mount Type

Surface

Pin Count

5

Maximum Drain Source Resistance Rds

1mΩ

Channel Mode

Enhancement

Maximum Gate Source Voltage Vgs

20 V

Typical Gate Charge Qg @ Vgs

87nC

Minimum Operating Temperature

-55°C

Maximum Power Dissipation Pd

333W

Maximum Operating Temperature

175°C

Standards/Approvals

RoHS

Automotive Standard

No

COO (Country of Origin):
PH
The Nexperia N-Channel MOSFET features Advanced TrenchMOS Super junction technology. This product has been designed and qualified for high performance power switching applications. It is designed for high-performance applications, including synchronous rectification, DC-to-DC converters, server power supplies, brushless DC motor control, battery protection, and load-switch/eFuse solutions. It offers high efficiency and reliable performance across a wide range of power management tasks.

Low parasitic inductance and resistance

High reliability clip bonded and solder die attach Power SO8 package

Wave solder able

Superfast switching with soft recovery

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