Nexperia PSM Type N-Channel MOSFET, 160 A, 40 V Enhancement, 5-Pin LFPAK PSMN2R8-40YSBX

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Subtotal (1 tape of 1 unit)*

Kr.10 52 

(exc. VAT)

Kr.13 15 

(inc. VAT)

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  • 3 000 unit(s) ready to ship
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1 - 9Kr. 10,52
10 - 99Kr. 9,61
100 - 499Kr. 8,92
500 - 999Kr. 8,12
1000 +Kr. 7,32

*price indicative

Packaging Options:
RS Stock No.:
219-397
Mfr. Part No.:
PSMN2R8-40YSBX
Brand:
Nexperia
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Brand

Nexperia

Channel Type

Type N

Product Type

MOSFET

Maximum Continuous Drain Current Id

160A

Maximum Drain Source Voltage Vds

40V

Package Type

LFPAK

Series

PSM

Mount Type

Surface

Pin Count

5

Maximum Drain Source Resistance Rds

2.8mΩ

Channel Mode

Enhancement

Maximum Power Dissipation Pd

147W

Typical Gate Charge Qg @ Vgs

37nC

Minimum Operating Temperature

-55°C

Maximum Gate Source Voltage Vgs

10 V

Maximum Operating Temperature

175°C

Standards/Approvals

RoHS

Automotive Standard

No

COO (Country of Origin):
PH
The Nexperia N-Channel MOSFET is utilizing Advanced TrenchMOS Super junction technology. The package is qualified to 175 °C. It is designed for high-performance power switching applications. Key applications include automation, robotics, DC-to-DC converters, brushless DC motor control, industrial load-switching, eFuse, and inrush management.

Low parasitic inductance and resistance

High reliability clip bonded and solder die attach Power SO8 package

Wave solder able

Superfast switching with soft recovery

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