onsemi NTD N-Channel MOSFET & Diode, 13 A, 600 V Enhancement, 3-Pin TO-252 NTD280N60S5Z
- RS Stock No.:
- 220-565
- Mfr. Part No.:
- NTD280N60S5Z
- Brand:
- onsemi
Bulk discount available
View bulk pricing optionsSubtotal (1 tape of 5 units)*
Kr. 177,66
(exc. VAT)
Kr. 222,075
(inc. VAT)
FREE delivery for online orders over 750,00 kr
In Stock
- Plus 2 475 unit(s) shipping from 21 September 2026
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Tape* |
|---|---|---|
| 5 - 45 | Kr. 35,532 | Kr. 177,66 |
| 50 - 95 | Kr. 33,748 | Kr. 168,74 |
| 100 - 495 | Kr. 31,30 | Kr. 156,50 |
| 500 - 995 | Kr. 28,828 | Kr. 144,14 |
| 1000 + | Kr. 27,73 | Kr. 138,65 |
*price indicative
- RS Stock No.:
- 220-565
- Mfr. Part No.:
- NTD280N60S5Z
- Brand:
- onsemi
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | onsemi | |
| Channel Type | N | |
| Product Type | MOSFET & Diode | |
| Maximum Continuous Drain Current Id | 13A | |
| Maximum Drain Source Voltage Vds | 600V | |
| Series | NTD | |
| Package Type | TO-252 | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 224mΩ | |
| Channel Mode | Enhancement | |
| Maximum Power Dissipation Pd | 89W | |
| Typical Gate Charge Qg @ Vgs | 17.9nC | |
| Forward Voltage Vf | 1.2V | |
| Maximum Gate Source Voltage Vgs | 20V | |
| Minimum Operating Temperature | -55°C | |
| Maximum Operating Temperature | 150°C | |
| Standards/Approvals | RoHS, Pb-Free, 100% Avalanche Tested | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand onsemi | ||
Channel Type N | ||
Product Type MOSFET & Diode | ||
Maximum Continuous Drain Current Id 13A | ||
Maximum Drain Source Voltage Vds 600V | ||
Series NTD | ||
Package Type TO-252 | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 224mΩ | ||
Channel Mode Enhancement | ||
Maximum Power Dissipation Pd 89W | ||
Typical Gate Charge Qg @ Vgs 17.9nC | ||
Forward Voltage Vf 1.2V | ||
Maximum Gate Source Voltage Vgs 20V | ||
Minimum Operating Temperature -55°C | ||
Maximum Operating Temperature 150°C | ||
Standards/Approvals RoHS, Pb-Free, 100% Avalanche Tested | ||
Automotive Standard No | ||
- COO (Country of Origin):
- CN
The ON Semiconductor MOSFET Easy Drive series combines excellent switching performance without sacrificing ease of use and EMI issues for both hard and soft switching topologies.
Halogen Free
RoHS Compliant
Related links
- onsemi NTD Type N-Channel MOSFET 30 V Enhancement, 3-Pin TO-252
- onsemi NTD Type N-Channel MOSFET 1200 V, 5-Pin TO-252
- onsemi SUPERFET III N-Channel MOSFET & Diode 800 V Enhancement, 3-Pin TO-252
- onsemi SUPERFET III N-Channel MOSFET & Diode 800 V Enhancement, 3-Pin TO-252 NTD360N80S3Z
- onsemi SUPERFET III N-Channel MOSFET & Diode 800 V Enhancement, 3-Pin TO-220
- onsemi SUPERFET III N-Channel MOSFET & Diode 800 V Enhancement, 3-Pin TO-220 NTPF360N80S3Z
- onsemi NTD N-Channel MOSFET 30 V Enhancement, 3-Pin TO-252 NTD20N03L27T4G
- Infineon HEXFET Type N-Channel MOSFET & Diode 40 V Enhancement, 3-Pin TO-263 AUIRF1404STRL