onsemi NTD N-Channel MOSFET & Diode, 13 A, 600 V Enhancement, 3-Pin TO-252 NTD280N60S5Z
- RS Stock No.:
- 220-565
- Mfr. Part No.:
- NTD280N60S5Z
- Brand:
- onsemi
Bulk discount available
View bulk pricing optionsSubtotal (1 tape of 5 units)*
Kr. 177,66
(exc. VAT)
Kr. 222,08
(inc. VAT)
FREE delivery for online orders over 750,00 kr
In Stock
- Plus 2 475 unit(s) shipping from 20 October 2026
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Tape* |
|---|---|---|
| 5 - 45 | Kr. 35,532 | Kr. 177,66 |
| 50 - 95 | Kr. 33,748 | Kr. 168,74 |
| 100 - 495 | Kr. 31,30 | Kr. 156,50 |
| 500 - 995 | Kr. 28,828 | Kr. 144,14 |
| 1000 + | Kr. 27,73 | Kr. 138,65 |
*price indicative
- RS Stock No.:
- 220-565
- Mfr. Part No.:
- NTD280N60S5Z
- Brand:
- onsemi
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | onsemi | |
| Channel Type | N | |
| Product Type | MOSFET & Diode | |
| Maximum Continuous Drain Current Id | 13A | |
| Maximum Drain Source Voltage Vds | 600V | |
| Package Type | TO-252 | |
| Series | NTD | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 224mΩ | |
| Channel Mode | Enhancement | |
| Minimum Operating Temperature | -55°C | |
| Typical Gate Charge Qg @ Vgs | 17.9nC | |
| Maximum Power Dissipation Pd | 89W | |
| Maximum Gate Source Voltage Vgs | 20V | |
| Forward Voltage Vf | 1.2V | |
| Maximum Operating Temperature | 150°C | |
| Standards/Approvals | RoHS, Pb-Free, 100% Avalanche Tested | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand onsemi | ||
Channel Type N | ||
Product Type MOSFET & Diode | ||
Maximum Continuous Drain Current Id 13A | ||
Maximum Drain Source Voltage Vds 600V | ||
Package Type TO-252 | ||
Series NTD | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 224mΩ | ||
Channel Mode Enhancement | ||
Minimum Operating Temperature -55°C | ||
Typical Gate Charge Qg @ Vgs 17.9nC | ||
Maximum Power Dissipation Pd 89W | ||
Maximum Gate Source Voltage Vgs 20V | ||
Forward Voltage Vf 1.2V | ||
Maximum Operating Temperature 150°C | ||
Standards/Approvals RoHS, Pb-Free, 100% Avalanche Tested | ||
Automotive Standard No | ||
- COO (Country of Origin):
- CN
The ON Semiconductor MOSFET Easy Drive series combines excellent switching performance without sacrificing ease of use and EMI issues for both hard and soft switching topologies.
Halogen Free
RoHS Compliant
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