onsemi NTMFS Type N-Channel MOSFET, 181 A, 80 V Enhancement, 5-Pin DFN-5 NTMFS2D5N08XT1G
- RS Stock No.:
- 220-603
- Mfr. Part No.:
- NTMFS2D5N08XT1G
- Brand:
- onsemi
Bulk discount available
Subtotal (1 tape of 5 units)*
Kr.133 62
(exc. VAT)
Kr.167 025
(inc. VAT)
FREE delivery for online orders over 500,00 kr
Temporarily out of stock
- Shipping from 22. juni 2026
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Units | Per unit | Per Tape* |
|---|---|---|
| 5 - 45 | Kr. 26,724 | Kr. 133,62 |
| 50 - 95 | Kr. 25,442 | Kr. 127,21 |
| 100 - 495 | Kr. 23,52 | Kr. 117,60 |
| 500 - 995 | Kr. 21,644 | Kr. 108,22 |
| 1000 + | Kr. 20,866 | Kr. 104,33 |
*price indicative
- RS Stock No.:
- 220-603
- Mfr. Part No.:
- NTMFS2D5N08XT1G
- Brand:
- onsemi
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | onsemi | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 181A | |
| Maximum Drain Source Voltage Vds | 80V | |
| Series | NTMFS | |
| Package Type | DFN-5 | |
| Mount Type | Surface | |
| Pin Count | 5 | |
| Maximum Drain Source Resistance Rds | 2.1mΩ | |
| Channel Mode | Enhancement | |
| Typical Gate Charge Qg @ Vgs | 33nC | |
| Maximum Power Dissipation Pd | 148W | |
| Forward Voltage Vf | 1.2V | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Minimum Operating Temperature | -55°C | |
| Maximum Operating Temperature | 175°C | |
| Standards/Approvals | RoHS | |
| Length | 6.15mm | |
| Height | 1mm | |
| Width | 5.15 mm | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand onsemi | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 181A | ||
Maximum Drain Source Voltage Vds 80V | ||
Series NTMFS | ||
Package Type DFN-5 | ||
Mount Type Surface | ||
Pin Count 5 | ||
Maximum Drain Source Resistance Rds 2.1mΩ | ||
Channel Mode Enhancement | ||
Typical Gate Charge Qg @ Vgs 33nC | ||
Maximum Power Dissipation Pd 148W | ||
Forward Voltage Vf 1.2V | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Minimum Operating Temperature -55°C | ||
Maximum Operating Temperature 175°C | ||
Standards/Approvals RoHS | ||
Length 6.15mm | ||
Height 1mm | ||
Width 5.15 mm | ||
Automotive Standard No | ||
- COO (Country of Origin):
- MY
The ON Semiconductor Power MOSFET Technology with best-in-class On-Resistance for motor driver application. Lower On-Resistance and less gate charge can reduce conduction loss and driving loss. Good softness control for body diode reverse recovery can reduce voltage spike stress without extra snubber circuit in application.
Halogen Free
RoHS Compliant
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