ROHM RV7 N-Channel MOSFET, 4 A, 30 V Enhancement, 3-Pin DFN1212-3 RV7E040AJTCR1
- RS Stock No.:
- 265-381
- Mfr. Part No.:
- RV7E040AJTCR1
- Brand:
- ROHM
Bulk discount available
View bulk pricing optionsSubtotal (1 tape of 25 units)*
Kr. 64,75
(exc. VAT)
Kr. 81,00
(inc. VAT)
FREE delivery for online orders over 750,00 kr
In Stock
- Plus 100 unit(s) shipping from 28 September 2026
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Tape* |
|---|---|---|
| 25 - 75 | Kr. 2,59 | Kr. 64,75 |
| 100 - 225 | Kr. 2,462 | Kr. 61,55 |
| 250 - 475 | Kr. 2,279 | Kr. 56,98 |
| 500 - 975 | Kr. 2,096 | Kr. 52,40 |
| 1000 + | Kr. 2,022 | Kr. 50,55 |
*price indicative
- RS Stock No.:
- 265-381
- Mfr. Part No.:
- RV7E040AJTCR1
- Brand:
- ROHM
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | ROHM | |
| Product Type | MOSFET | |
| Channel Type | N | |
| Maximum Continuous Drain Current Id | 4A | |
| Maximum Drain Source Voltage Vds | 30V | |
| Series | RV7 | |
| Package Type | DFN1212-3 | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 45mΩ | |
| Channel Mode | Enhancement | |
| Maximum Power Dissipation Pd | 1.1W | |
| Forward Voltage Vf | 1.2V | |
| Maximum Gate Source Voltage Vgs | 12V | |
| Minimum Operating Temperature | -55°C | |
| Typical Gate Charge Qg @ Vgs | 4.0nC | |
| Maximum Operating Temperature | 150°C | |
| Standards/Approvals | No | |
| Width | 1.2mm | |
| Length | 1.2mm | |
| Height | 0.5mm | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand ROHM | ||
Product Type MOSFET | ||
Channel Type N | ||
Maximum Continuous Drain Current Id 4A | ||
Maximum Drain Source Voltage Vds 30V | ||
Series RV7 | ||
Package Type DFN1212-3 | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 45mΩ | ||
Channel Mode Enhancement | ||
Maximum Power Dissipation Pd 1.1W | ||
Forward Voltage Vf 1.2V | ||
Maximum Gate Source Voltage Vgs 12V | ||
Minimum Operating Temperature -55°C | ||
Typical Gate Charge Qg @ Vgs 4.0nC | ||
Maximum Operating Temperature 150°C | ||
Standards/Approvals No | ||
Width 1.2mm | ||
Length 1.2mm | ||
Height 0.5mm | ||
Automotive Standard No | ||
The ROHM MOSFET is designed for switching and load switching applications. Housed in a leadless ultra small SMD plastic package of 1.2x1.2x0.5 mm with an exposed drain pad, it offers excellent thermal conduction, ensuring efficient performance in compact electronic designs.
RoHS compliant
Low on resistance
Pb free lead plating
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