Infineon OptiMOS Type N-Channel MOSFET, 99 A, 80 V Enhancement, 8-Pin PG-WHSON-8 IQE050N08NM5SCATMA1

RS Stock No.:: 284-774
Mfr. Part No.:: IQE050N08NM5SCATMA1
Brand:: Infineon

Infineon OptiMOS Type N-Channel MOSFET, 99 A, 80 V Enhancement, 8-Pin PG-WHSON-8 IQE050N08NM5SCATMA1

Bulk discount available

Subtotal (1 pack of 5 units)*

Kr.138 10

(exc. VAT)

Kr.172 60

(inc. VAT)

FREE delivery for online orders over 500,00 kr

In Stock

Plus 100 unit(s) shipping from 19. januar 2026

Need more? Click ‘Check delivery dates’ to find extra stock and lead times.

Units	Per unit	Per Pack*
5 - 45	Kr. 27,62	Kr. 138,10
50 - 95	Kr. 26,244	Kr. 131,22
100 - 495	Kr. 24,322	Kr. 121,61
500 - 995	Kr. 22,354	Kr. 111,77
1000 +	Kr. 21,53	Kr. 107,65

*price indicative

RS Stock No.:: 284-774
Mfr. Part No.:: IQE050N08NM5SCATMA1
Brand:: Infineon

Specifications

Technical Reference

Legislation and Compliance

Product Details

Find similar products by selecting one or more attributes.

Select all	Attribute	Value
	Brand	Infineon
	Product Type	MOSFET
	Channel Type	Type N
	Maximum Continuous Drain Current Id	99A
	Maximum Drain Source Voltage Vds	80V
	Package Type	PG-WHSON-8
	Series	OptiMOS
	Mount Type	Surface
	Pin Count	8
	Maximum Drain Source Resistance Rds	5mΩ
	Channel Mode	Enhancement
	Typical Gate Charge Qg @ Vgs	35nC
	Maximum Power Dissipation Pd	100W
	Forward Voltage Vf	1.1V
	Maximum Gate Source Voltage Vgs	20 V
	Minimum Operating Temperature	-55°C
	Maximum Operating Temperature	175°C
	Standards/Approvals	JEDEC, IEC61249-2-21, RoHS
	Automotive Standard	No

	Select all
	Brand Infineon
	Product Type MOSFET
	Channel Type Type N
	Maximum Continuous Drain Current Id 99A
	Maximum Drain Source Voltage Vds 80V
	Package Type PG-WHSON-8
	Series OptiMOS
	Mount Type Surface
	Pin Count 8
	Maximum Drain Source Resistance Rds 5mΩ
	Channel Mode Enhancement
	Typical Gate Charge Qg @ Vgs 35nC
	Maximum Power Dissipation Pd 100W
	Forward Voltage Vf 1.1V
	Maximum Gate Source Voltage Vgs 20 V
	Minimum Operating Temperature -55°C
	Maximum Operating Temperature 175°C
	Standards/Approvals JEDEC, IEC61249-2-21, RoHS
	Automotive Standard No

Datasheet - IQE050N08NM5SCATMA1

The Infineon MOSFET features an OptiMOS 5 Power Transistor, rated at 80V, is specifically designed to enhance the efficiency and performance of modern electronic applications. It excels in providing superior synchronous rectification, ensuring minimal energy losses and maximising overall system reliability. Thanks to its low on resistance and exceptional thermal management, this transistor is Ideal for demanding industrial applications, making it a preferred choice for engineers aiming for performance optimisation. With extensive avalanche testing and robust construction, it promises longevity in severe environments and aligns with global RoHS standards, ensuring a strong commitment to safety and sustainability.

Optimised for synchronous rectification

N channel for easy circuit integration

Low on resistance reduces heat generation

Exceptional thermal resistance prevents overheating

100% avalanche tested for reliability

Pb free lead plating for eco friendly manufacturing

Halogen free construction meets regulations

Infineon OptiMOS Type N-Channel MOSFET, 99 A, 80 V Enhancement, 8-Pin PG-WHSON-8 IQE050N08NM5SCATMA1

FREE delivery for online orders over 500,00 kr

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