Infineon OptiMOS Type N-Channel MOSFET, 71 A, 30 V Enhancement, 3-Pin PG-TO252-3 IPD047N03LF2SATMA1

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Kr.164 74 

(exc. VAT)

Kr.205 92 

(inc. VAT)

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20 - 180Kr. 8,237Kr. 164,74
200 - 480Kr. 7,825Kr. 156,50
500 +Kr. 7,247Kr. 144,94

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RS Stock No.:
348-899
Mfr. Part No.:
IPD047N03LF2SATMA1
Brand:
Infineon
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Brand

Infineon

Channel Type

Type N

Product Type

MOSFET

Maximum Continuous Drain Current Id

71A

Maximum Drain Source Voltage Vds

30V

Series

OptiMOS

Package Type

PG-TO252-3

Mount Type

Surface

Pin Count

3

Maximum Drain Source Resistance Rds

4.7mΩ

Channel Mode

Enhancement

Typical Gate Charge Qg @ Vgs

10nC

Maximum Power Dissipation Pd

65W

Maximum Gate Source Voltage Vgs

20 V

Minimum Operating Temperature

-55°C

Maximum Operating Temperature

175°C

Standards/Approvals

DIN IEC 68-1: 55/175/56, IEC61249-2-21, RoHS

Automotive Standard

No

COO (Country of Origin):
CN
The Infineon StrongIRFET 2 power MOSFET 30 V technology features a best in class RDS(on) of 4.7 mOhm in a DPAK package. This product addresses a broad range of applications from low to high switching frequency.

General purpose products

Excellent robustness

Broad availability at distributors

Standard packages and pin out

High manufacturing and supply standards

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