onsemi UF3 Type N-Channel Single MOSFETs, 7.6 A, 1200 V Enhancement, 3-Pin TO-247-3 UF3C120400K3S

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Subtotal (1 bag of 2 units)*

Kr.283 37 

(exc. VAT)

Kr.354 212 

(inc. VAT)

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Units
Per unit
Per Bag*
2 - 8Kr. 141,685Kr. 283,37
10 +Kr. 138,88Kr. 277,76

*price indicative

Packaging Options:
RS Stock No.:
648-529
Mfr. Part No.:
UF3C120400K3S
Brand:
onsemi
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Brand

onsemi

Product Type

Single MOSFETs

Channel Type

Type N

Maximum Continuous Drain Current Id

7.6A

Maximum Drain Source Voltage Vds

1200V

Series

UF3

Package Type

TO-247-3

Mount Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance Rds

515mΩ

Channel Mode

Enhancement

Typical Gate Charge Qg @ Vgs

27nC

Maximum Power Dissipation Pd

100W

Minimum Operating Temperature

-55°C

Maximum Gate Source Voltage Vgs

25 V

Forward Voltage Vf

1.5V

Maximum Operating Temperature

175°C

Length

20.96mm

Width

15.90 mm

Height

5.03mm

Standards/Approvals

RoHS, Pb-Free

Automotive Standard

No

COO (Country of Origin):
CH
The ON Semiconductor EliteSiC Cascode JFETs combine a normally-on SiC JFET with a Si MOSFET to create a normally-off device in a cascode circuit configuration, offering superior switching performance and reliability. Benefits include high efficiency, faster frequency, increased power density, reduced EMI, and smaller system size. These devices support standard gate drivers, simplifying the replacement of Si IGBTs and super junction devices. Ideal for switching inductive loads.

On-resistance RDS(on)

Maximum operating temperature of 175 °C

Excellent Reverse Recover

Low Gate Charge

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