onsemi UF3 Type N-Channel Single MOSFETs, 7.6 A, 1200 V Enhancement, 3-Pin TO-247-3 UF3C120400K3S
- RS Stock No.:
- 648-529
- Mfr. Part No.:
- UF3C120400K3S
- Brand:
- onsemi
Bulk discount available
Subtotal (1 bag of 2 units)*
Kr.283 37
(exc. VAT)
Kr.354 212
(inc. VAT)
FREE delivery for online orders over 500,00 kr
In Stock
- 600 unit(s) ready to ship
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Bag* |
|---|---|---|
| 2 - 8 | Kr. 141,685 | Kr. 283,37 |
| 10 + | Kr. 138,88 | Kr. 277,76 |
*price indicative
- RS Stock No.:
- 648-529
- Mfr. Part No.:
- UF3C120400K3S
- Brand:
- onsemi
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | onsemi | |
| Channel Type | Type N | |
| Product Type | Single MOSFETs | |
| Maximum Continuous Drain Current Id | 7.6A | |
| Maximum Drain Source Voltage Vds | 1200V | |
| Series | UF3 | |
| Package Type | TO-247-3 | |
| Mount Type | Through Hole | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 515mΩ | |
| Channel Mode | Enhancement | |
| Typical Gate Charge Qg @ Vgs | 27nC | |
| Forward Voltage Vf | 1.5V | |
| Maximum Power Dissipation Pd | 100W | |
| Minimum Operating Temperature | -55°C | |
| Maximum Gate Source Voltage Vgs | 25 V | |
| Maximum Operating Temperature | 175°C | |
| Height | 5.03mm | |
| Width | 15.90 mm | |
| Standards/Approvals | RoHS, Pb-Free | |
| Length | 20.96mm | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand onsemi | ||
Channel Type Type N | ||
Product Type Single MOSFETs | ||
Maximum Continuous Drain Current Id 7.6A | ||
Maximum Drain Source Voltage Vds 1200V | ||
Series UF3 | ||
Package Type TO-247-3 | ||
Mount Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 515mΩ | ||
Channel Mode Enhancement | ||
Typical Gate Charge Qg @ Vgs 27nC | ||
Forward Voltage Vf 1.5V | ||
Maximum Power Dissipation Pd 100W | ||
Minimum Operating Temperature -55°C | ||
Maximum Gate Source Voltage Vgs 25 V | ||
Maximum Operating Temperature 175°C | ||
Height 5.03mm | ||
Width 15.90 mm | ||
Standards/Approvals RoHS, Pb-Free | ||
Length 20.96mm | ||
Automotive Standard No | ||
- COO (Country of Origin):
- CH
The ON Semiconductor EliteSiC Cascode JFETs combine a normally-on SiC JFET with a Si MOSFET to create a normally-off device in a cascode circuit configuration, offering superior switching performance and reliability. Benefits include high efficiency, faster frequency, increased power density, reduced EMI, and smaller system size. These devices support standard gate drivers, simplifying the replacement of Si IGBTs and super junction devices. Ideal for switching inductive loads.
On-resistance RDS(on)
Maximum operating temperature of 175 °C
Excellent Reverse Recover
Low Gate Charge
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