Vishay SI8818EDB Type N-Channel Single MOSFETs, 2.2 A, 30 V Enhancement, 4-Pin PowerPAK

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Kr.2 40 

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Kr.3 00 

(inc. VAT)

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1 - 24Kr. 2,40
25 - 99Kr. 2,06
100 - 499Kr. 1,94
500 - 999Kr. 1,60
1000 +Kr. 1,49

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RS Stock No.:
653-091
Mfr. Part No.:
SI8818EDB-T2-E1
Brand:
Vishay
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Brand

Vishay

Product Type

Single MOSFETs

Channel Type

Type N

Maximum Continuous Drain Current Id

2.2A

Maximum Drain Source Voltage Vds

30V

Package Type

PowerPAK

Series

SI8818EDB

Mount Type

Surface

Pin Count

4

Maximum Drain Source Resistance Rds

0.143Ω

Channel Mode

Enhancement

Minimum Operating Temperature

-55°C

Maximum Power Dissipation Pd

0.9W

Maximum Gate Source Voltage Vgs

±12 V

Typical Gate Charge Qg @ Vgs

2.4nC

Maximum Operating Temperature

150°C

Width

0.8 mm

Length

0.8mm

Standards/Approvals

No

Height

0.39mm

Automotive Standard

No

COO (Country of Origin):
CN
The Vishay N-channel MOSFET designed for ultra-compact, high-efficiency switching in space-constrained systems. It supports up to 30 V drain-source voltage. Packaged in MICRO FOOT 0.8 mm x 0.8 mm, it utilizes TrenchFET technology to deliver low RDS(on), fast switching, and excellent thermal performance.

Pb Free

Halogen free

RoHS compliant

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