Vishay SQ2389CES Type P-Channel Single MOSFETs, -4.1 A, -40 V Enhancement, 3-Pin SOT-23
- RS Stock No.:
- 653-160
- Mfr. Part No.:
- SQ2389CES-T1_GE3
- Brand:
- Vishay
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(inc. VAT)
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Tape(s) | Per Tape |
|---|---|
| 1 - 24 | Kr. 4,69 |
| 25 - 99 | Kr. 4,23 |
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| 500 - 999 | Kr. 3,32 |
| 1000 + | Kr. 2,97 |
*price indicative
- RS Stock No.:
- 653-160
- Mfr. Part No.:
- SQ2389CES-T1_GE3
- Brand:
- Vishay
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Vishay | |
| Product Type | Single MOSFETs | |
| Channel Type | Type P | |
| Maximum Continuous Drain Current Id | -4.1A | |
| Maximum Drain Source Voltage Vds | -40V | |
| Series | SQ2389CES | |
| Package Type | SOT-23 | |
| Mount Type | PCB | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 0.094Ω | |
| Channel Mode | Enhancement | |
| Maximum Power Dissipation Pd | 3W | |
| Typical Gate Charge Qg @ Vgs | 12nC | |
| Forward Voltage Vf | -1.2V | |
| Maximum Gate Source Voltage Vgs | 20V | |
| Minimum Operating Temperature | -55°C | |
| Maximum Operating Temperature | 175°C | |
| Width | 2.64mm | |
| Standards/Approvals | RoHS | |
| Length | 3.04mm | |
| Automotive Standard | AEC-Q101 | |
| Select all | ||
|---|---|---|
Brand Vishay | ||
Product Type Single MOSFETs | ||
Channel Type Type P | ||
Maximum Continuous Drain Current Id -4.1A | ||
Maximum Drain Source Voltage Vds -40V | ||
Series SQ2389CES | ||
Package Type SOT-23 | ||
Mount Type PCB | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 0.094Ω | ||
Channel Mode Enhancement | ||
Maximum Power Dissipation Pd 3W | ||
Typical Gate Charge Qg @ Vgs 12nC | ||
Forward Voltage Vf -1.2V | ||
Maximum Gate Source Voltage Vgs 20V | ||
Minimum Operating Temperature -55°C | ||
Maximum Operating Temperature 175°C | ||
Width 2.64mm | ||
Standards/Approvals RoHS | ||
Length 3.04mm | ||
Automotive Standard AEC-Q101 | ||
Vishay SQ2389CES Series Single MOSFETs, 3W Maximum Power Dissipation, -40V Maximum Drain Source Voltage - SQ2389CES-T1_GE3
This single MOSFETs device is a P-channel enhancement-mode MOSFET designed for PCB mounting in compact SOT-23 packages. It is intended for power switching and control in applications requiring moderate current handling and compact board space, with operation across a wide industrial-to-automotive temperature range.
Features and Benefits:
• Low on-resistance 0.094Ω reduces conduction losses
• 3W power dissipation enables sustained power handling
• Continuous drain current 4.1A supports medium-load switching
• Gate charge 12nC yields efficient switching performance
• Gate-source rating 20V allows robust gate drive margins
• Forward voltage -1.2V minimises voltage drop in conduction
• 3W power dissipation enables sustained power handling
• Continuous drain current 4.1A supports medium-load switching
• Gate charge 12nC yields efficient switching performance
• Gate-source rating 20V allows robust gate drive margins
• Forward voltage -1.2V minimises voltage drop in conduction
Applications
• Suitable for automotive power distribution and load switching
• Ideal for battery management and protection circuits
• Used with driver ICs in DC power conversion stages
• Can be used for reverse-polarity protection in modules
• Used for compact motor driver low-side or high-side switching
• Ideal for battery management and protection circuits
• Used with driver ICs in DC power conversion stages
• Can be used for reverse-polarity protection in modules
• Used for compact motor driver low-side or high-side switching
What mounting considerations are required for thermal management?
Thermal performance depends on PCB copper area and vias
increasing copper around the SOT-23 pad improves heat dissipation for the 3W power rating.
Which environmental extremes can it withstand during operation?
The device remains functional from -55°C up to 175°C, suitable for high-temperature automotive compartments and harsh industrial settings.
What polarity and voltage limitations apply to the gate and drain?
The drain-to-source blocking capability is -40V and the gate may be driven up to 20V relative to source within safe operating limits.
How many pins are available and what is the package footprint?
It is supplied in a three-pin SOT-23 package with overall package dimensions of 3.04mm by 2.64mm.
Related links
- Vishay SQ2389CES Type P-Channel Single MOSFETs -40 V Enhancement, 3-Pin SOT-23 SQ2389CES-T1_GE3
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- Vishay TrenchFET Type P-Channel MOSFET 40 V Enhancement, 3-Pin SOT-23
