Vishay SISS126DN N channel-Channel MOSFET, 54.7 A, 80 V Enhancement, 8-Pin PowerPAK 1212-8 SISS126DN-T1-UE3

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Subtotal (1 tape of 1 unit)*

Kr. 15,79

(exc. VAT)

Kr. 19,74

(inc. VAT)

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1 - 24Kr. 15,79
25 - 99Kr. 10,41
100 - 499Kr. 5,38
500 +Kr. 5,03

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RS Stock No.:
735-130
Mfr. Part No.:
SISS126DN-T1-UE3
Brand:
Vishay
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Brand

Vishay

Channel Type

N channel

Product Type

MOSFET

Maximum Continuous Drain Current Id

54.7A

Maximum Drain Source Voltage Vds

80V

Package Type

PowerPAK 1212-8

Series

SISS126DN

Mount Type

Surface Mount

Pin Count

8

Maximum Drain Source Resistance Rds

0.00825Ω

Channel Mode

Enhancement

Forward Voltage Vf

1.1V

Typical Gate Charge Qg @ Vgs

19.6nC

Minimum Operating Temperature

-55°C

Maximum Power Dissipation Pd

57W

Maximum Gate Source Voltage Vgs

20V

Maximum Operating Temperature

150°C

Standards/Approvals

RoHS

Width

3.3mm

Length

3.3mm

Automotive Standard

No

COO (Country of Origin):
IL
The Vishay N-Channel MOSFET designed for optimal efficiency in power management applications, delivering high performance while operating within specified limits.

Operates at a drain-source voltage of 80 V for reliable performance

Exhibits very low on-state resistance to minimise power loss

Offers a high continuous drain current rating of up to 54.7 A

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