Vishay SISS52DN N channel-Channel MOSFET, 162 A, 30 V Enhancement, 8-Pin PowerPAK 1212-8S SISS52DN-T1-BE3

Subtotal (1 tape of 1 unit)*

Kr. 12,58

(exc. VAT)

Kr. 15,72

(inc. VAT)

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  • Shipping from 28 June 2027
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Tape(s)
Per Tape
1 +Kr. 12,58

*price indicative

RS Stock No.:
736-353
Mfr. Part No.:
SISS52DN-T1-BE3
Brand:
Vishay
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Brand

Vishay

Channel Type

N channel

Product Type

MOSFET

Maximum Continuous Drain Current Id

162A

Maximum Drain Source Voltage Vds

30V

Series

SISS52DN

Package Type

PowerPAK 1212-8S

Mount Type

Surface

Pin Count

8

Maximum Drain Source Resistance Rds

0.00095Ω

Channel Mode

Enhancement

Maximum Power Dissipation Pd

57W

Minimum Operating Temperature

-55°C

Typical Gate Charge Qg @ Vgs

38nC

Maximum Gate Source Voltage Vgs

16V

Forward Voltage Vf

1.1V

Maximum Operating Temperature

150°C

Length

3.3mm

Width

3.3mm

Standards/Approvals

RoHS

Automotive Standard

No

COO (Country of Origin):
IL
The Vishay N-Channel MOSFET designed for robust switching applications, offering excellent efficiency and reliability in power management solutions.

Tested for 100% R g and UIS, ensuring superior reliability

Material compliance categorisation enhances environmental safety

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