Infineon CoolSiC N channel-Channel Power MOSFET, 43 A, 400 V Enhancement, 16-Pin PG-HDSOP-16 IMLT40R045M2HXTMA1
- RS Stock No.:
- 762-907
- Mfr. Part No.:
- IMLT40R045M2HXTMA1
- Brand:
- Infineon
Bulk discount available
View bulk pricing optionsSubtotal (1 unit)*
Kr. 50,58
(exc. VAT)
Kr. 63,22
(inc. VAT)
FREE delivery for online orders over 750,00 kr
In Stock
- Plus 1 800 unit(s) shipping from 01 June 2026
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit |
|---|---|
| 1 - 9 | Kr. 50,58 |
| 10 - 49 | Kr. 40,94 |
| 50 - 99 | Kr. 31,31 |
| 100 + | Kr. 25,15 |
*price indicative
- RS Stock No.:
- 762-907
- Mfr. Part No.:
- IMLT40R045M2HXTMA1
- Brand:
- Infineon
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Channel Type | N channel | |
| Product Type | Power MOSFET | |
| Maximum Continuous Drain Current Id | 43A | |
| Maximum Drain Source Voltage Vds | 400V | |
| Series | CoolSiC | |
| Package Type | PG-HDSOP-16 | |
| Mount Type | Surface | |
| Pin Count | 16 | |
| Maximum Drain Source Resistance Rds | 44.9mΩ | |
| Channel Mode | Enhancement | |
| Forward Voltage Vf | 4.3V | |
| Typical Gate Charge Qg @ Vgs | 21nC | |
| Maximum Gate Source Voltage Vgs | 25V | |
| Maximum Power Dissipation Pd | 150W | |
| Minimum Operating Temperature | -55°C | |
| Maximum Operating Temperature | 175°C | |
| Width | 2.35mm | |
| Standards/Approvals | RoHS | |
| Height | 15.2mm | |
| Length | 10.1mm | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Infineon | ||
Channel Type N channel | ||
Product Type Power MOSFET | ||
Maximum Continuous Drain Current Id 43A | ||
Maximum Drain Source Voltage Vds 400V | ||
Series CoolSiC | ||
Package Type PG-HDSOP-16 | ||
Mount Type Surface | ||
Pin Count 16 | ||
Maximum Drain Source Resistance Rds 44.9mΩ | ||
Channel Mode Enhancement | ||
Forward Voltage Vf 4.3V | ||
Typical Gate Charge Qg @ Vgs 21nC | ||
Maximum Gate Source Voltage Vgs 25V | ||
Maximum Power Dissipation Pd 150W | ||
Minimum Operating Temperature -55°C | ||
Maximum Operating Temperature 175°C | ||
Width 2.35mm | ||
Standards/Approvals RoHS | ||
Height 15.2mm | ||
Length 10.1mm | ||
Automotive Standard No | ||
- COO (Country of Origin):
- MY
The Infineon CoolSiC MOSFET is Ideal for high frequency switching and synchronous rectific and features Benchmark gate threshold voltage. Additionally it features XT interconnection technology for best‑in‑class thermal performance.
100% avalanche tested
Recommended gate driving voltage
Qualified for industrial applications
Used for energy storage, UPS and battery formation
Related links
- Infineon CoolSiC N channel-Channel Power MOSFET 650 V Enhancement, 16-Pin PG-HDSOP-16 IMLT65R075M2HXTMA1
- Infineon CoolSiC N channel-Channel Power MOSFET 400 V Enhancement, 16-Pin PG-HDSOP-16 IMLT40R036M2HXTMA1
- Infineon CoolSiC N channel-Channel Power MOSFET 400 V Enhancement, 16-Pin PG-HDSOP-16 IMLT40R015M2HXTMA1
- Infineon CoolSiC N channel-Channel Power MOSFET 400 V Enhancement, 16-Pin PG-HDSOP-16 IMLT40R025M2HXTMA1
- Infineon CoolSiC N channel-Channel Power MOSFET 400 V Enhancement, 16-Pin PG-HDSOP-16 IMLT40R011M2HXTMA1
- Infineon CoolSiC Type N-Channel MOSFET 650 V Enhancement, 16-Pin PG-HDSOP-16 IMLT65R020M2HXTMA1
- Infineon CoolSiC Type N-Channel MOSFET 650 V Enhancement, 16-Pin PG-HDSOP-16 IMLT65R015M2HXTMA1
- Infineon CoolSiC Type N-Channel MOSFET 650 V Enhancement, 16-Pin PG-HDSOP-16 IMLT65R060M2HXTMA1