Infineon CoolSiC N channel-Channel Power MOSFET, 104 A, 400 V Enhancement, 3-Pin TO-247 IMW40R011M2HXKSA1
- RS Stock No.:
- 762-965
- Mfr. Part No.:
- IMW40R011M2HXKSA1
- Brand:
- Infineon
Bulk discount available
Subtotal (1 unit)*
Kr. 183,31
(exc. VAT)
Kr. 229,14
(inc. VAT)
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Units | Per unit |
|---|---|
| 1 - 9 | Kr. 183,31 |
| 10 - 24 | Kr. 164,98 |
| 25 + | Kr. 135,67 |
*price indicative
- RS Stock No.:
- 762-965
- Mfr. Part No.:
- IMW40R011M2HXKSA1
- Brand:
- Infineon
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Channel Type | N channel | |
| Product Type | Power MOSFET | |
| Maximum Continuous Drain Current Id | 104A | |
| Maximum Drain Source Voltage Vds | 400V | |
| Series | CoolSiC | |
| Package Type | TO-247 | |
| Mount Type | Through Hole | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 11.5mΩ | |
| Channel Mode | Enhancement | |
| Typical Gate Charge Qg @ Vgs | 85nC | |
| Forward Voltage Vf | 4.3V | |
| Minimum Operating Temperature | -55°C | |
| Maximum Power Dissipation Pd | 341W | |
| Maximum Operating Temperature | 175°C | |
| Standards/Approvals | RoHS | |
| Length | 20.8mm | |
| Height | 4.83mm | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Infineon | ||
Channel Type N channel | ||
Product Type Power MOSFET | ||
Maximum Continuous Drain Current Id 104A | ||
Maximum Drain Source Voltage Vds 400V | ||
Series CoolSiC | ||
Package Type TO-247 | ||
Mount Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 11.5mΩ | ||
Channel Mode Enhancement | ||
Typical Gate Charge Qg @ Vgs 85nC | ||
Forward Voltage Vf 4.3V | ||
Minimum Operating Temperature -55°C | ||
Maximum Power Dissipation Pd 341W | ||
Maximum Operating Temperature 175°C | ||
Standards/Approvals RoHS | ||
Length 20.8mm | ||
Height 4.83mm | ||
Automotive Standard No | ||
- COO (Country of Origin):
- CN
The Infineon CoolSiC MOSFET is Ideal for high frequency switching and synchronous rectification. It use .XT interconnection technology for best‑in‑class thermal performance and the recommended gate driving voltage 0 V to 18 V.
Commutation robust fast body diode
100% avalanche tested
Qualified for industrial applications
400V operating voltage
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