Microchip mSiC N-Channel MOSFET, 27 A, 3.3 kV, 4-Pin TO-247-4L MSC080SMA330B4N
- RS Stock No.:
- 813-825
- Mfr. Part No.:
- MSC080SMA330B4N
- Brand:
- Microchip
Subtotal (1 unit)*
Kr. 650,48
(exc. VAT)
Kr. 813,10
(inc. VAT)
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Units | Per unit |
|---|---|
| 1 + | Kr. 650,48 |
*price indicative
- RS Stock No.:
- 813-825
- Mfr. Part No.:
- MSC080SMA330B4N
- Brand:
- Microchip
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Microchip | |
| Channel Type | N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 27A | |
| Maximum Drain Source Voltage Vds | 3.3kV | |
| Package Type | TO-247-4L | |
| Series | mSiC | |
| Mount Type | Screw | |
| Pin Count | 4 | |
| Maximum Drain Source Resistance Rds | 80mΩ | |
| Typical Gate Charge Qg @ Vgs | 161nC | |
| Maximum Power Dissipation Pd | 439W | |
| Minimum Operating Temperature | -55°C | |
| Maximum Operating Temperature | 150°C | |
| Length | 16.13mm | |
| Width | 23.6mm | |
| Standards/Approvals | RoHS Compliant | |
| Height | 5.21mm | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Microchip | ||
Channel Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 27A | ||
Maximum Drain Source Voltage Vds 3.3kV | ||
Package Type TO-247-4L | ||
Series mSiC | ||
Mount Type Screw | ||
Pin Count 4 | ||
Maximum Drain Source Resistance Rds 80mΩ | ||
Typical Gate Charge Qg @ Vgs 161nC | ||
Maximum Power Dissipation Pd 439W | ||
Minimum Operating Temperature -55°C | ||
Maximum Operating Temperature 150°C | ||
Length 16.13mm | ||
Width 23.6mm | ||
Standards/Approvals RoHS Compliant | ||
Height 5.21mm | ||
Automotive Standard No | ||
- COO (Country of Origin):
- CN
The Microchip N Channel mSiC MOSFET is a high-performance electronic switch designed to operate efficiently at high voltages and temperatures. It primarily functions to regulate power in Advanced applications.
Low capacitances and gate charge enhance switching efficiency
Rapid switching speed ensures optimal performance with reduced losses
Stable operation at high junction temperatures up to 150 °C
Reliable body diode contributes to system stability and longevity
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