Vishay SISS N channel-Channel Single MOSFETs, 14.2 A, 100 V Enhancement Mode, 8-Pin P SISS110DN-T1-GE3
- RS Stock No.:
- 829-345
- Mfr. Part No.:
- SISS110DN-T1-GE3
- Brand:
- Vishay
Bulk discount available
View bulk pricing optionsSubtotal (1 unit)*
Kr. 11,78
(exc. VAT)
Kr. 14,72
(inc. VAT)
FREE delivery for online orders over 750,00 kr
Temporarily out of stock
- Shipping from 13 September 2027
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit |
|---|---|
| 1 - 9 | Kr. 11,78 |
| 10 - 99 | Kr. 7,32 |
| 100 - 499 | Kr. 4,80 |
| 500 - 999 | Kr. 3,66 |
| 1000 + | Kr. 3,32 |
*price indicative
- RS Stock No.:
- 829-345
- Mfr. Part No.:
- SISS110DN-T1-GE3
- Brand:
- Vishay
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Vishay | |
| Product Type | Single MOSFETs | |
| Channel Type | N channel | |
| Maximum Continuous Drain Current Id | 14.2A | |
| Maximum Drain Source Voltage Vds | 100V | |
| Series | SISS | |
| Package Type | P | |
| Mount Type | Surface Mount | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 0.054Ω | |
| Channel Mode | Enhancement Mode | |
| Typical Gate Charge Qg @ Vgs | 6.5nC | |
| Maximum Gate Source Voltage Vgs | 20V | |
| Forward Voltage Vf | 1.2V | |
| Minimum Operating Temperature | -55°C | |
| Maximum Power Dissipation Pd | 24W | |
| Maximum Operating Temperature | 150°C | |
| Standards/Approvals | RoHS Compliant | |
| Length | 3.30mm | |
| Width | 3.30mm | |
| Height | 1.04mm | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Vishay | ||
Product Type Single MOSFETs | ||
Channel Type N channel | ||
Maximum Continuous Drain Current Id 14.2A | ||
Maximum Drain Source Voltage Vds 100V | ||
Series SISS | ||
Package Type P | ||
Mount Type Surface Mount | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 0.054Ω | ||
Channel Mode Enhancement Mode | ||
Typical Gate Charge Qg @ Vgs 6.5nC | ||
Maximum Gate Source Voltage Vgs 20V | ||
Forward Voltage Vf 1.2V | ||
Minimum Operating Temperature -55°C | ||
Maximum Power Dissipation Pd 24W | ||
Maximum Operating Temperature 150°C | ||
Standards/Approvals RoHS Compliant | ||
Length 3.30mm | ||
Width 3.30mm | ||
Height 1.04mm | ||
Automotive Standard No | ||
- COO (Country of Origin):
- IL
The Vishay N-Channel MOSFET delivers efficient power management solutions with excellent conduction capabilities. Designed for demanding applications, it offers superior switching and thermal performance.
Features TrenchFET Gen IV technology for superior efficiency and performance
Guaranteed 100% RDS(on) and UIS tested for reliability in operation
Continuous drain current rating of 11 A ensures robust delivery
Optimised for low RDS(on) values, enhancing thermal performance
Related links
- Vishay SISS N channel-Channel Single MOSFETs 80 V Enhancement Mode, 8-Pin P SISS128LDN-T1-UE3
- Vishay SISS N channel-Channel Single MOSFETs 60 V Enhancement Mode, 8-Pin PowerPAK 1212-8SLW SISS4634LDN-T1-GE3
- Vishay SISS N channel-Channel Single MOSFETs 60 V Enhancement Mode, 8-Pin PowerPAK 1212-8SLW SISS862ADN-T1-UE3
- Vishay SI N channel-Channel Single MOSFETs 80 V Enhancement Mode, 8-Pin P SIR580LDP-T1-UE3
- Vishay SIR N channel-Channel Single MOSFETs 100 V Enhancement Mode, 8-Pin P SIRS5100EPW-T1-RE3
- Vishay SI N channel-Channel Single MOSFETs 80 V Enhancement Mode, 8-Pin P SIR580DP-T1-UE3
- Vishay SIR N channel-Channel Single MOSFETs 80 V Enhancement Mode, 8-Pin P SIR680ADP-T1-UE3
- Vishay SI N channel-Channel Single MOSFETs 30 V Enhancement Mode, 6-Pin P SIA432BDJ-T1-GE3