Vishay SQJ N-Channel Single MOSFETs, 95 A, 200 V Enhancement Mode, 8-Pin P SQJQ190ER-T1_GE3
- RS Stock No.:
- 829-355
- Mfr. Part No.:
- SQJQ190ER-T1_GE3
- Brand:
- Vishay
Get a bulk buy discount
Add 10 more to save 34%
View bulk pricing optionsSubtotal (1 unit)*
Kr. 59,03
(exc. VAT)
Kr. 73,79
(inc. VAT)
FREE delivery for online orders over 750,00 kr
Temporarily out of stock
- Shipping from 13 May 2027
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Saving |
|---|---|---|
| 1 - 9 | Kr. 59,03 | - |
| 10 - 99 | Kr. 38,67 | 34% |
| 100 - 499 | Kr. 28,37 | 51% |
| 500 - 999 | Kr. 25,40 | 56% |
| 1000 + | Kr. 24,14 | 59% |
*price indicative
- RS Stock No.:
- 829-355
- Mfr. Part No.:
- SQJQ190ER-T1_GE3
- Brand:
- Vishay
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Vishay | |
| Channel Type | N | |
| Product Type | Single MOSFETs | |
| Maximum Continuous Drain Current Id | 95A | |
| Maximum Drain Source Voltage Vds | 200V | |
| Package Type | P | |
| Series | SQJ | |
| Mount Type | Surface Mount | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 0.0143Ω | |
| Channel Mode | Enhancement Mode | |
| Minimum Operating Temperature | -55°C | |
| Maximum Gate Source Voltage Vgs | 20V | |
| Maximum Power Dissipation Pd | 375W | |
| Typical Gate Charge Qg @ Vgs | 56nC | |
| Forward Voltage Vf | 1.2V | |
| Maximum Operating Temperature | 175°C | |
| Length | 8.1mm | |
| Standards/Approvals | RoHS Compliant | |
| Width | 8mm | |
| Height | 1.04mm | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Vishay | ||
Channel Type N | ||
Product Type Single MOSFETs | ||
Maximum Continuous Drain Current Id 95A | ||
Maximum Drain Source Voltage Vds 200V | ||
Package Type P | ||
Series SQJ | ||
Mount Type Surface Mount | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 0.0143Ω | ||
Channel Mode Enhancement Mode | ||
Minimum Operating Temperature -55°C | ||
Maximum Gate Source Voltage Vgs 20V | ||
Maximum Power Dissipation Pd 375W | ||
Typical Gate Charge Qg @ Vgs 56nC | ||
Forward Voltage Vf 1.2V | ||
Maximum Operating Temperature 175°C | ||
Length 8.1mm | ||
Standards/Approvals RoHS Compliant | ||
Width 8mm | ||
Height 1.04mm | ||
Automotive Standard No | ||
- COO (Country of Origin):
- DE
The Vishay power MOSFET offers exceptional performance in automotive applications, ensuring reliable operation under challenging conditions with robust thermal management capabilities for both performance and lifespan.
TrenchFET technology for enhanced efficiency
AEC-Q101 qualified for automotive industry reliability
Thin profile of 1.9 mm complements Compact designs
Maximum drain-source voltage of 200 V supports high-performance circuits
Related links
- Vishay SQJ N-Channel Single MOSFETs 60 V Enhancement Mode, 8-Pin P SQJ160ELP-T1_GE3
- Vishay SQJ N-Channel Single MOSFETs 60 V Enhancement Mode, 8-Pin P SQJ766EP-T1_GE3
- Vishay SQJ P-Channel Single MOSFETs -60 V Enhancement Mode, 8-Pin P SQJ457EP-T1_NE3
- Vishay SI N-Channel Single MOSFETs 80 V Enhancement Mode, 8-Pin P SIR580LDP-T1-UE3
- Vishay SI N-Channel Single MOSFETs 80 V Enhancement Mode, 8-Pin P SIR580DP-T1-UE3
- Vishay SISS N-Channel Single MOSFETs 80 V Enhancement Mode, 8-Pin P SISS128LDN-T1-UE3
- Vishay SIR N-Channel Single MOSFETs 80 V Enhancement Mode, 8-Pin P SIR680ADP-T1-UE3
- Vishay SISS N-Channel Single MOSFETs 100 V Enhancement Mode, 8-Pin P SISS110DN-T1-GE3