STMicroelectronics MDmesh Type N-Channel MOSFET, 11 A, 800 V Enhancement, 3-Pin TO-247
- RS Stock No.:
- 103-1986
- Mfr. Part No.:
- STW11NM80
- Brand:
- STMicroelectronics
Bulk discount available
Subtotal (1 tube of 30 units)*
Kr. 873,09
(exc. VAT)
Kr. 1 091,37
(inc. VAT)
Stock information currently inaccessible - Please check back later
Units | Per unit | Per Tube* |
|---|---|---|
| 30 - 60 | Kr. 29,103 | Kr. 873,09 |
| 90 - 480 | Kr. 23,254 | Kr. 697,62 |
| 510 - 960 | Kr. 20,691 | Kr. 620,73 |
| 990 - 4980 | Kr. 18,449 | Kr. 553,47 |
| 5010 + | Kr. 18,014 | Kr. 540,42 |
*price indicative
- RS Stock No.:
- 103-1986
- Mfr. Part No.:
- STW11NM80
- Brand:
- STMicroelectronics
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | STMicroelectronics | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 11A | |
| Maximum Drain Source Voltage Vds | 800V | |
| Series | MDmesh | |
| Package Type | TO-247 | |
| Mount Type | Through Hole | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 400mΩ | |
| Channel Mode | Enhancement | |
| Minimum Operating Temperature | -65°C | |
| Maximum Power Dissipation Pd | 150W | |
| Maximum Gate Source Voltage Vgs | 30 V | |
| Typical Gate Charge Qg @ Vgs | 43.6nC | |
| Forward Voltage Vf | 0.86V | |
| Maximum Operating Temperature | 150°C | |
| Height | 20.15mm | |
| Standards/Approvals | No | |
| Length | 15.75mm | |
| Width | 5.15 mm | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand STMicroelectronics | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 11A | ||
Maximum Drain Source Voltage Vds 800V | ||
Series MDmesh | ||
Package Type TO-247 | ||
Mount Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 400mΩ | ||
Channel Mode Enhancement | ||
Minimum Operating Temperature -65°C | ||
Maximum Power Dissipation Pd 150W | ||
Maximum Gate Source Voltage Vgs 30 V | ||
Typical Gate Charge Qg @ Vgs 43.6nC | ||
Forward Voltage Vf 0.86V | ||
Maximum Operating Temperature 150°C | ||
Height 20.15mm | ||
Standards/Approvals No | ||
Length 15.75mm | ||
Width 5.15 mm | ||
Automotive Standard No | ||
N-Channel MDmesh™, 800V/1500V, STMicroelectronics
MOSFET Transistors, STMicroelectronics
Related links
- STMicroelectronics MDmesh Type N-Channel MOSFET 800 V Enhancement, 3-Pin TO-247 STW11NM80
- STMicroelectronics MDmesh Type N-Channel MOSFET 800 V Enhancement, 3-Pin TO-220
- STMicroelectronics MDmesh Type N-Channel MOSFET 800 V Enhancement, 3-Pin TO-220 STF11NM80
- STMicroelectronics MDmesh Type N-Channel MOSFET 800 V Enhancement, 3-Pin TO-220 STP11NM80
- STMicroelectronics MDmesh 11 A 3-Pin TO-247
- STMicroelectronics MDmesh Type N-Channel MOSFET 500 V Enhancement, 3-Pin TO-247
- STMicroelectronics MDmesh Type N-Channel MOSFET 600 V Enhancement, 3-Pin TO-247
- STMicroelectronics MDmesh Type N-Channel MOSFET 1500 V Enhancement, 3-Pin TO-247