Infineon CoolMOS CP Type N-Channel MOSFET, 21 A, 650 V Enhancement, 3-Pin TO-247 IPW60R165CPFKSA1
- RS Stock No.:
- 110-7743
- Mfr. Part No.:
- IPW60R165CPFKSA1
- Brand:
- Infineon
Bulk discount available
Subtotal (1 pack of 4 units)*
Kr.244 972
(exc. VAT)
Kr.306 216
(inc. VAT)
FREE delivery for online orders over 500,00 kr
Stock information currently inaccessible
Units | Per unit | Per Pack* |
|---|---|---|
| 4 - 4 | Kr. 61,243 | Kr. 244,97 |
| 8 - 16 | Kr. 58,145 | Kr. 232,58 |
| 20 - 36 | Kr. 55,743 | Kr. 222,97 |
| 40 - 96 | Kr. 53,253 | Kr. 213,01 |
| 100 + | Kr. 49,62 | Kr. 198,48 |
*price indicative
- RS Stock No.:
- 110-7743
- Mfr. Part No.:
- IPW60R165CPFKSA1
- Brand:
- Infineon
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 21A | |
| Maximum Drain Source Voltage Vds | 650V | |
| Series | CoolMOS CP | |
| Package Type | TO-247 | |
| Mount Type | Through Hole | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 160mΩ | |
| Channel Mode | Enhancement | |
| Minimum Operating Temperature | -55°C | |
| Typical Gate Charge Qg @ Vgs | 39nC | |
| Maximum Power Dissipation Pd | 192W | |
| Maximum Gate Source Voltage Vgs | 30 V | |
| Forward Voltage Vf | -1.2V | |
| Maximum Operating Temperature | 150°C | |
| Width | 5.21 mm | |
| Height | 21.1mm | |
| Length | 16.13mm | |
| Standards/Approvals | No | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Infineon | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 21A | ||
Maximum Drain Source Voltage Vds 650V | ||
Series CoolMOS CP | ||
Package Type TO-247 | ||
Mount Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 160mΩ | ||
Channel Mode Enhancement | ||
Minimum Operating Temperature -55°C | ||
Typical Gate Charge Qg @ Vgs 39nC | ||
Maximum Power Dissipation Pd 192W | ||
Maximum Gate Source Voltage Vgs 30 V | ||
Forward Voltage Vf -1.2V | ||
Maximum Operating Temperature 150°C | ||
Width 5.21 mm | ||
Height 21.1mm | ||
Length 16.13mm | ||
Standards/Approvals No | ||
Automotive Standard No | ||
Infineon CoolMOS™CP Power MOSFET
MOSFET Transistors, Infineon
Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.
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