DiodesZetex Isolated 2 Type N, Type P-Channel Power MOSFET, 4.5 A, 30 V Enhancement, 6-Pin TSOT
- RS Stock No.:
- 122-3246
- Mfr. Part No.:
- DMG6601LVT-7
- Brand:
- DiodesZetex
Bulk discount available
Subtotal (1 reel of 3000 units)*
Kr.2 439 00
(exc. VAT)
Kr.3 048 00
(inc. VAT)
FREE delivery for online orders over 500,00 kr
Temporarily out of stock
- 18 000 unit(s) shipping from 29. desember 2025
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Reel* |
|---|---|---|
| 3000 - 6000 | Kr. 0,813 | Kr. 2 439,00 |
| 9000 + | Kr. 0,793 | Kr. 2 379,00 |
*price indicative
- RS Stock No.:
- 122-3246
- Mfr. Part No.:
- DMG6601LVT-7
- Brand:
- DiodesZetex
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | DiodesZetex | |
| Channel Type | Type N, Type P | |
| Product Type | Power MOSFET | |
| Maximum Continuous Drain Current Id | 4.5A | |
| Maximum Drain Source Voltage Vds | 30V | |
| Package Type | TSOT | |
| Mount Type | Surface | |
| Pin Count | 6 | |
| Maximum Drain Source Resistance Rds | 190mΩ | |
| Channel Mode | Enhancement | |
| Maximum Gate Source Voltage Vgs | 12 V | |
| Maximum Power Dissipation Pd | 1.3W | |
| Forward Voltage Vf | 0.75V | |
| Typical Gate Charge Qg @ Vgs | 5.4nC | |
| Minimum Operating Temperature | 150°C | |
| Transistor Configuration | Isolated | |
| Maximum Operating Temperature | -55°C | |
| Standards/Approvals | AEC-Q101, RoHS, MIL-STD-202, J-STD-020, UL 94V-0 | |
| Length | 2.9mm | |
| Height | 0.9mm | |
| Width | 1.6 mm | |
| Number of Elements per Chip | 2 | |
| Automotive Standard | AEC-Q101 | |
| Select all | ||
|---|---|---|
Brand DiodesZetex | ||
Channel Type Type N, Type P | ||
Product Type Power MOSFET | ||
Maximum Continuous Drain Current Id 4.5A | ||
Maximum Drain Source Voltage Vds 30V | ||
Package Type TSOT | ||
Mount Type Surface | ||
Pin Count 6 | ||
Maximum Drain Source Resistance Rds 190mΩ | ||
Channel Mode Enhancement | ||
Maximum Gate Source Voltage Vgs 12 V | ||
Maximum Power Dissipation Pd 1.3W | ||
Forward Voltage Vf 0.75V | ||
Typical Gate Charge Qg @ Vgs 5.4nC | ||
Minimum Operating Temperature 150°C | ||
Transistor Configuration Isolated | ||
Maximum Operating Temperature -55°C | ||
Standards/Approvals AEC-Q101, RoHS, MIL-STD-202, J-STD-020, UL 94V-0 | ||
Length 2.9mm | ||
Height 0.9mm | ||
Width 1.6 mm | ||
Number of Elements per Chip 2 | ||
Automotive Standard AEC-Q101 | ||
- COO (Country of Origin):
- CN
Dual N/P-Channel MOSFET, Diodes Inc.
MOSFET Transistors, Diodes Inc.
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