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Renesas N-Channel MOSFET, 3 A, 900 V, 3 + Tab-Pin TO-3P 2SK1339-E

RS Stock No.:: 124-3649
Mfr. Part No.:: 2SK1339-E
Brand:: Renesas Electronics

Renesas N-Channel MOSFET, 3 A, 900 V, 3 + Tab-Pin TO-3P 2SK1339-E

Currently unavailable

We don't know if this item will be back in stock, RS intend to remove it from our range soon.

RS Stock No.:: 124-3649
Mfr. Part No.:: 2SK1339-E
Brand:: Renesas Electronics

Specifications

Technical Reference

Legislation and Compliance

Product Details

Find similar products by selecting one or more attributes.

Select all	Attribute	Value
	Brand	Renesas Electronics
	Channel Type	N
	Maximum Continuous Drain Current	3 A
	Maximum Drain Source Voltage	900 V
	Package Type	TO-3P
	Mounting Type	Through Hole
	Pin Count	3 + Tab
	Maximum Drain Source Resistance	7 Ω
	Channel Mode	Enhancement
	Maximum Power Dissipation	80 W
	Transistor Configuration	Single
	Maximum Gate Source Voltage	-30 V, +30 V
	Maximum Operating Temperature	+150 °C
	Width	4.8mm
	Length	15.6mm
	Transistor Material	Si
	Number of Elements per Chip	1
	Height	19.9mm
	Forward Diode Voltage	0.9V

	Select all
	Brand Renesas Electronics
	Channel Type N
	Maximum Continuous Drain Current 3 A
	Maximum Drain Source Voltage 900 V
	Package Type TO-3P
	Mounting Type Through Hole
	Pin Count 3 + Tab
	Maximum Drain Source Resistance 7 Ω
	Channel Mode Enhancement
	Maximum Power Dissipation 80 W
	Transistor Configuration Single
	Maximum Gate Source Voltage -30 V, +30 V
	Maximum Operating Temperature +150 °C
	Width 4.8mm
	Length 15.6mm
	Transistor Material Si
	Number of Elements per Chip 1
	Height 19.9mm
	Forward Diode Voltage 0.9V

COO (Country of Origin):: JP

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Renesas N-Channel MOSFET, 3 A, 900 V, 3 + Tab-Pin TO-3P 2SK1339-E

N-Channel High Voltage MOSFETs 150V and Over, Renesas Electronics

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