N-Channel MOSFET, 6.8 A, 650 V, 3-Pin DPAK Toshiba TK7P65W,RQ(S

RS Stock No.:: 133-2801
Mfr. Part No.:: TK7P65W,RQ(S
Brand:: Toshiba

N-Channel MOSFET, 6.8 A, 650 V, 3-Pin DPAK Toshiba TK7P65W,RQ(S

10 In stock for same day dispatch

Price Each (In a Pack of 10)

Kr. 2,773

(exc. VAT)

Kr. 3,466

(inc. VAT)

Units	Per unit	Per Pack*
10 +	Kr. 2,773	Kr. 27,73

*price indicative

RS Stock No.:: 133-2801
Mfr. Part No.:: TK7P65W,RQ(S
Brand:: Toshiba

TK7P65W, MOSFET N-Channel 650V
ESD Control Selection Guide V1

Attribute	Value
Channel Type	N
Maximum Continuous Drain Current	6.8 A
Maximum Drain Source Voltage	650 V
Package Type	DPAK (TO-252)
Series	DTMOSIV
Mounting Type	Surface Mount
Pin Count	3
Maximum Drain Source Resistance	800 mΩ
Channel Mode	Enhancement
Maximum Gate Threshold Voltage	3.5V
Minimum Gate Threshold Voltage	2.5V
Maximum Power Dissipation	60 W
Transistor Configuration	Single
Maximum Gate Source Voltage	-30 V, +30 V
Maximum Operating Temperature	+150 °C
Number of Elements per Chip	1
Width	6.1mm
Typical Gate Charge @ Vgs	15 nC @ 10 V
Transistor Material	Si
Length	6.6mm
Height	2.3mm
Forward Diode Voltage	1.7V

N-Channel MOSFET, 6.8 A, 650 V, 3-Pin DPAK Toshiba TK7P65W,RQ(S

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