onsemi NVD5C668NL Type N-Channel MOSFET, 49 A, 60 V Enhancement, 3-Pin TO-252 NVD5C668NLT4G
- RS Stock No.:
- 141-7216
- Mfr. Part No.:
- NVD5C668NLT4G
- Brand:
- onsemi
Bulk discount available
Subtotal (1 pack of 5 units)*
Kr.124 35
(exc. VAT)
Kr.155 45
(inc. VAT)
FREE delivery for online orders over 500,00 kr
Supply shortage
- Plus 14 460 left, shipping from 29. desember 2025
Our current stock is limited and our suppliers are expecting shortages.
Units | Per unit | Per Pack* |
|---|---|---|
| 5 - 45 | Kr. 24,87 | Kr. 124,35 |
| 50 - 95 | Kr. 21,438 | Kr. 107,19 |
| 100 - 495 | Kr. 18,578 | Kr. 92,89 |
| 500 - 995 | Kr. 16,336 | Kr. 81,68 |
| 1000 + | Kr. 14,872 | Kr. 74,36 |
*price indicative
- RS Stock No.:
- 141-7216
- Mfr. Part No.:
- NVD5C668NLT4G
- Brand:
- onsemi
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | onsemi | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 49A | |
| Maximum Drain Source Voltage Vds | 60V | |
| Series | NVD5C668NL | |
| Package Type | TO-252 | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 12.8mΩ | |
| Channel Mode | Enhancement | |
| Typical Gate Charge Qg @ Vgs | 18.7nC | |
| Minimum Operating Temperature | -55°C | |
| Maximum Power Dissipation Pd | 44W | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Forward Voltage Vf | 1.2V | |
| Maximum Operating Temperature | 175°C | |
| Width | 6.22 mm | |
| Standards/Approvals | No | |
| Length | 6.73mm | |
| Height | 2.38mm | |
| Automotive Standard | AEC-Q101 | |
| Select all | ||
|---|---|---|
Brand onsemi | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 49A | ||
Maximum Drain Source Voltage Vds 60V | ||
Series NVD5C668NL | ||
Package Type TO-252 | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 12.8mΩ | ||
Channel Mode Enhancement | ||
Typical Gate Charge Qg @ Vgs 18.7nC | ||
Minimum Operating Temperature -55°C | ||
Maximum Power Dissipation Pd 44W | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Forward Voltage Vf 1.2V | ||
Maximum Operating Temperature 175°C | ||
Width 6.22 mm | ||
Standards/Approvals No | ||
Length 6.73mm | ||
Height 2.38mm | ||
Automotive Standard AEC-Q101 | ||
N-Channel Power MOSFET, 60V, ON Semiconductor
MOSFET Transistors, ON Semiconductor
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