onsemi UltraFET Type N-Channel MOSFET, 75 A, 55 V Enhancement, 3-Pin TO-220

View all MOSFETs

Subtotal (1 tube of 50 units)*

Kr.557 15 

(exc. VAT)

Kr.696 45 

(inc. VAT)

Add to Basket
Select or type quantity
In Stock
  • Plus 100 unit(s) shipping from 29. desember 2025
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units
Per unit
Per Tube*
50 +Kr. 11,143Kr. 557,15

*price indicative

RS Stock No.:
145-4541
Mfr. Part No.:
HUF75339P3
Brand:
onsemi
Find similar products by selecting one or more attributes.
Select all

Brand

onsemi

Product Type

MOSFET

Channel Type

Type N

Maximum Continuous Drain Current Id

75A

Maximum Drain Source Voltage Vds

55V

Package Type

TO-220

Series

UltraFET

Mount Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance Rds

12mΩ

Channel Mode

Enhancement

Typical Gate Charge Qg @ Vgs

110nC

Forward Voltage Vf

1.25V

Maximum Gate Source Voltage Vgs

20 V

Maximum Power Dissipation Pd

200W

Minimum Operating Temperature

-55°C

Maximum Operating Temperature

175°C

Height

9.4mm

Length

10.67mm

Standards/Approvals

No

Width

4.83 mm

Automotive Standard

No

COO (Country of Origin):
MY

UltraFET® MOSFET, Fairchild Semiconductor


UItraFET® Trench MOSFET combine characteristics that enable Benchmark efficiency in power conversion applications. The device is capable of withstanding high energy in the avalanche mode, and the diode exhibits very low reverse recovery time and stored charge. Optimised for efficiency at high frequencies, lowest RDS(on), low ESR, and low total and Miller gate charge.

Applications in high frequency DC to DC converters, switching regulators, motor drivers, low-voltage bus switches, and power management.

MOSFET Transistors, ON Semi


ON Semi offers a substantial portfolio of MOSFET devices that includes high-voltage (>250V) and low-voltage (<250V) types. The Advanced silicon technology provides smaller die sizes, which it is incorporated into multiple industry-standard and thermally-enhanced packages.

ON Semi MOSFETs provide superior design reliability from reduced voltage spikes and overshoot, to lower junction capacitance and reverse recovery charge, to elimination of additional external components to keep systems up and running longer.

Related links