Wolfspeed Type N-Channel MOSFET, 60 A, 1200 V Enhancement, 3-Pin TO-247

Subtotal (1 tube of 30 units)*

Kr.10 810 35 

(exc. VAT)

Kr.13 512 93 

(inc. VAT)

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  • Final 210 unit(s), ready to ship
Units
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Per Tube*
30 +Kr. 360,345Kr. 10 810,35

*price indicative

RS Stock No.:
145-5875
Mfr. Part No.:
C2M0040120D
Brand:
Wolfspeed
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Brand

Wolfspeed

Channel Type

Type N

Product Type

MOSFET

Maximum Continuous Drain Current Id

60A

Maximum Drain Source Voltage Vds

1200V

Package Type

TO-247

Mount Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance Rds

52mΩ

Channel Mode

Enhancement

Forward Voltage Vf

4V

Maximum Gate Source Voltage Vgs

20 V

Minimum Operating Temperature

-55°C

Maximum Power Dissipation Pd

330W

Typical Gate Charge Qg @ Vgs

115nC

Maximum Operating Temperature

150°C

Length

16.13mm

Height

21.1mm

Width

5.21 mm

Standards/Approvals

No

Automotive Standard

No

COO (Country of Origin):
CN

Wolfspeed Silicon Carbide Power MOSFETs


Wolfspeed Z-Fet™, C2M™ & C3M™ Silicon Carbide Power MOSFETs. A range of second generation SiC MOSFETs from Cree's power division Wolfspeed which deliver industry-leading power density and switching efficiency. These low-capacitance devices allow higher switching frequencies and have reduced cooling requirements improving overall system operating efficiency.

• Enhancement-mode N-channel SiC technology

• High Drain-Source breakdown voltages - up to 1200V

• Multiple devices are easy to parallel and simple to drive

• High speed switching with low on-resistance

• Latch-up resistant operation

MOSFET Transistors, Wolfspeed


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