Infineon OptiMOS 3 N-Channel MOSFET, 45 A, 100 V Enhancement, 3-Pin TO-220 IPA086N10N3GXKSA1
- RS Stock No.:
- 145-8705
- Mfr. Part No.:
- IPA086N10N3GXKSA1
- Brand:
- Infineon
Bulk discount available
View bulk pricing optionsSubtotal (50 units, in tubes of 50)*
Kr. 871,75
(exc. VAT)
Kr. 1 089,70
(inc. VAT)
FREE delivery for online orders over 750,00 kr
In Stock
- 1 700 unit(s) ready to ship
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Tube* |
|---|---|---|
| 50 - 50 | Kr. 17,435 | Kr. 871,75 |
| 100 - 200 | Kr. 14,645 | Kr. 732,25 |
| 250 - 450 | Kr. 13,774 | Kr. 688,70 |
| 500 - 950 | Kr. 12,728 | Kr. 636,40 |
| 1000 + | Kr. 11,856 | Kr. 592,80 |
*price indicative
- RS Stock No.:
- 145-8705
- Mfr. Part No.:
- IPA086N10N3GXKSA1
- Brand:
- Infineon
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Channel Type | N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 45A | |
| Maximum Drain Source Voltage Vds | 100V | |
| Package Type | TO-220 | |
| Series | OptiMOS 3 | |
| Mount Type | Through Hole | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 15.4mΩ | |
| Channel Mode | Enhancement | |
| Forward Voltage Vf | 1.2V | |
| Maximum Power Dissipation Pd | 37.5W | |
| Maximum Gate Source Voltage Vgs | -20V, +20V | |
| Typical Gate Charge Qg @ Vgs | 42nC | |
| Minimum Operating Temperature | -55°C | |
| Maximum Operating Temperature | 175°C | |
| Length | 10.65mm | |
| Width | 4.85mm | |
| Standards/Approvals | No | |
| Height | 16.15mm | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Infineon | ||
Channel Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 45A | ||
Maximum Drain Source Voltage Vds 100V | ||
Package Type TO-220 | ||
Series OptiMOS 3 | ||
Mount Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 15.4mΩ | ||
Channel Mode Enhancement | ||
Forward Voltage Vf 1.2V | ||
Maximum Power Dissipation Pd 37.5W | ||
Maximum Gate Source Voltage Vgs -20V, +20V | ||
Typical Gate Charge Qg @ Vgs 42nC | ||
Minimum Operating Temperature -55°C | ||
Maximum Operating Temperature 175°C | ||
Length 10.65mm | ||
Width 4.85mm | ||
Standards/Approvals No | ||
Height 16.15mm | ||
Automotive Standard No | ||
- COO (Country of Origin):
- CN
Infineon OptiMOS™ 3 Series MOSFET, 45A Maximum Continuous Drain Current, 37.5W Maximum Power Dissipation - IPA086N10N3GXKSA1
This MOSFET is engineered for high-performance applications in automation, electronics, and electrical engineering. As a power transistor, it enhances power management by providing excellent efficiency and reliability. Its Durable design supports high-frequency switching, making it suitable for environments where strong performance is essential.
Features & Benefits
• N-channel configuration optimises current management
• Low on-resistance enhances overall system efficiency
• Operates at temperatures up to +175°C for adaptable applications
• Fully isolated package improves safety during operation
• Compliant with RoHS and halogen-free standards for eco-friendly use
Applications
• Ideal for high-frequency switching in electronic devices
• Employed in synchronous rectification to maximise efficiency
• Suitable for requiring high current handling
• Effective in temperature-sensitive environments due to robust thermal performance
What is the significance of the low on-resistance feature in this device?
The low on-resistance feature reduces power losses during operation, leading to improved efficiency in power management circuits. This results in less heat generation and enhanced overall performance.
Can this MOSFET be used in automotive applications?
Yes, it is appropriate for automotive applications as it meets high-temperature performance requirements and provides dependable operation under varying load conditions.
How does the gate threshold voltage influence circuit function?
The gate threshold voltage determines when the MOSFET begins conducting. In this case, it ranges from 2V to 3.5V, ensuring activation occurs only under suitable voltage levels, thereby protecting other components.
What types of circuits are most compatible with this power transistor?
This power transistor is compatible with high-frequency switching circuits and synchronous rectification applications, offering versatility for various electronic designs.
How should the MOSFET be mounted for optimal performance?
The MOSFET should be mounted using the through-hole method to ensure secure connections and effective heat dissipation based on its thermal resistance specifications.
Related links
- Infineon OptiMOS 3 N-Channel MOSFET 100 V Enhancement, 3-Pin TO-220 IPA086N10N3GXKSA1
- Infineon OptiMOS 3 Type N-Channel MOSFET 150 V Enhancement, 3-Pin TO-220
- Infineon OptiMOS 3 Type N-Channel MOSFET 80 V Enhancement, 3-Pin TO-220
- Infineon OptiMOS 3 Type N-Channel MOSFET 200 V Enhancement, 3-Pin TO-220
- Infineon OptiMOS 3 Type N-Channel MOSFET 150 V Enhancement, 3-Pin TO-220
- Infineon OptiMOS 3 Type N-Channel MOSFET 120 V Enhancement, 3-Pin TO-220
- Infineon OptiMOS 3 Type N-Channel MOSFET 60 V Enhancement, 3-Pin TO-220
- Infineon OptiMOS 3 Type N-Channel MOSFET 80 V Enhancement, 3-Pin TO-220