Infineon CoolMOS C7 Type N-Channel MOSFET, 13 A, 700 V Enhancement, 3-Pin TO-247
- RS Stock No.:
- 145-8738
- Mfr. Part No.:
- IPW65R190C7XKSA1
- Brand:
- Infineon
Bulk discount available
Subtotal (1 tube of 30 units)*
Kr.1 009 11
(exc. VAT)
Kr.1 261 38
(inc. VAT)
FREE delivery for online orders over 500,00 kr
In Stock
- Plus 90 unit(s) shipping from 29. desember 2025
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Tube* |
|---|---|---|
| 30 - 30 | Kr. 33,637 | Kr. 1 009,11 |
| 60 - 120 | Kr. 31,956 | Kr. 958,68 |
| 150 - 270 | Kr. 30,61 | Kr. 918,30 |
| 300 - 570 | Kr. 29,264 | Kr. 877,92 |
| 600 + | Kr. 27,246 | Kr. 817,38 |
*price indicative
- RS Stock No.:
- 145-8738
- Mfr. Part No.:
- IPW65R190C7XKSA1
- Brand:
- Infineon
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 13A | |
| Maximum Drain Source Voltage Vds | 700V | |
| Package Type | TO-247 | |
| Series | CoolMOS C7 | |
| Mount Type | Through Hole | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 190mΩ | |
| Channel Mode | Enhancement | |
| Forward Voltage Vf | 0.9V | |
| Maximum Power Dissipation Pd | 72W | |
| Minimum Operating Temperature | -55°C | |
| Typical Gate Charge Qg @ Vgs | 23nC | |
| Maximum Gate Source Voltage Vgs | 30 V | |
| Maximum Operating Temperature | 150°C | |
| Length | 16.13mm | |
| Width | 21.1 mm | |
| Standards/Approvals | No | |
| Height | 5.21mm | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Infineon | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 13A | ||
Maximum Drain Source Voltage Vds 700V | ||
Package Type TO-247 | ||
Series CoolMOS C7 | ||
Mount Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 190mΩ | ||
Channel Mode Enhancement | ||
Forward Voltage Vf 0.9V | ||
Maximum Power Dissipation Pd 72W | ||
Minimum Operating Temperature -55°C | ||
Typical Gate Charge Qg @ Vgs 23nC | ||
Maximum Gate Source Voltage Vgs 30 V | ||
Maximum Operating Temperature 150°C | ||
Length 16.13mm | ||
Width 21.1 mm | ||
Standards/Approvals No | ||
Height 5.21mm | ||
Automotive Standard No | ||
- COO (Country of Origin):
- CN
Infineon CoolMOS™C6/C7 Power MOSFET
MOSFET Transistors, Infineon
Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.
Related links
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- Infineon CoolMOS™ C7 Dual N-Channel MOSFET Transistor & Diode 700 V, 3-Pin TO-247 IPW65R065C7XKSA1
- Infineon CoolMOS™ C7 N-Channel MOSFET 700 V, 3-Pin TO-220 IPP65R045C7XKSA1
