Infineon StrongIRFET N-Channel MOSFET, 195 A, 60 V Enhancement, 3-Pin TO-220
- RS Stock No.:
- 145-9657
- Mfr. Part No.:
- IRFB7530PBF
- Brand:
- Infineon
Bulk discount available
View bulk pricing optionsSubtotal (1 tube of 50 units)*
Kr. 933,50
(exc. VAT)
Kr. 1 167,00
(inc. VAT)
FREE delivery for online orders over 750,00 kr
Being discontinued
- Final 800 unit(s), ready to ship
Units | Per unit | Per Tube* |
|---|---|---|
| 50 - 50 | Kr. 18,67 | Kr. 933,50 |
| 100 - 200 | Kr. 16,375 | Kr. 818,75 |
| 250 + | Kr. 15,963 | Kr. 798,15 |
*price indicative
- RS Stock No.:
- 145-9657
- Mfr. Part No.:
- IRFB7530PBF
- Brand:
- Infineon
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Product Type | MOSFET | |
| Channel Type | N | |
| Maximum Continuous Drain Current Id | 195A | |
| Maximum Drain Source Voltage Vds | 60V | |
| Package Type | TO-220 | |
| Series | StrongIRFET | |
| Mount Type | Through Hole | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 2mΩ | |
| Channel Mode | Enhancement | |
| Minimum Operating Temperature | -55°C | |
| Forward Voltage Vf | 1.2V | |
| Typical Gate Charge Qg @ Vgs | 274nC | |
| Maximum Gate Source Voltage Vgs | -20V, +20V | |
| Maximum Power Dissipation Pd | 375W | |
| Maximum Operating Temperature | 175°C | |
| Standards/Approvals | No | |
| Length | 10.67mm | |
| Width | 4.83mm | |
| Height | 16.51mm | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Infineon | ||
Product Type MOSFET | ||
Channel Type N | ||
Maximum Continuous Drain Current Id 195A | ||
Maximum Drain Source Voltage Vds 60V | ||
Package Type TO-220 | ||
Series StrongIRFET | ||
Mount Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 2mΩ | ||
Channel Mode Enhancement | ||
Minimum Operating Temperature -55°C | ||
Forward Voltage Vf 1.2V | ||
Typical Gate Charge Qg @ Vgs 274nC | ||
Maximum Gate Source Voltage Vgs -20V, +20V | ||
Maximum Power Dissipation Pd 375W | ||
Maximum Operating Temperature 175°C | ||
Standards/Approvals No | ||
Length 10.67mm | ||
Width 4.83mm | ||
Height 16.51mm | ||
Automotive Standard No | ||
- COO (Country of Origin):
- MX
Infineon StrongIRFET Series MOSFET, 195A Maximum Continuous Drain Current, 375W Maximum Power Dissipation - IRFB7530PBF
This high current N-channel MOSFET is engineered for a range of power applications. Its Advanced structure allows for efficient switching and notable performance in challenging environments, making it suitable for the automation and electronics sectors, where reliability and robustness are essential for effective functioning in electrical circuits.
Features & Benefits
• Maximum continuous drain current of 195A
• Wide operating temperature range from -55°C to +175°C
• Enhanced durability with robust avalanche and dynamic dV/dt ruggedness
• Fully characterised capacitance and avalanche SOA
• Lead-free and complies with RoHS regulations for environmental safety
Applications
• Used in brushed motor drive
• Appropriate for half-bridge and full-bridge topologies
• Suitable for synchronous rectifier
• Ideal for battery-powered circuits and DC/DC converters
• Engaged in AC/DC and DC/AC inverter systems
What is the maximum gate threshold voltage for this component?
The maximum gate threshold voltage is 3.7V, facilitating efficient operation in various gate drive configurations.
Can this MOSFET operate in high-temperature environments?
Yes, it functions effectively within a temperature range of -55°C to +175°C, making it suitable for harsh conditions.
How does this MOSFET perform in terms of power dissipation?
It allows for a maximum power dissipation of 375 W, ensuring dependable performance under substantial load conditions.
Is it suitable for use in both DC and AC applications?
This component is designed for versatility, providing effective performance in both DC/DC and AC/DC power conversion applications.
What are the implications of its low RDS(on) for circuit design?
A low RDS(on) minimises conduction losses, thereby enhancing overall system efficiency and enabling smaller heat sinks and improved thermal performance in circuit designs.
Related links
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- Infineon StrongIRFET Type N-Channel MOSFET 40 V Enhancement, 3-Pin TO-220
- Infineon StrongIRFET N-Channel MOSFET 60 V Enhancement, 3-Pin TO-220 IRFB7530PBF
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- Infineon StrongIRFET Type N-Channel MOSFET 60 V Enhancement, 3-Pin TO-247