onsemi QFET Type N-Channel MOSFET, 70 A, 100 V Enhancement, 3-Pin TO-3PN
- RS Stock No.:
- 146-1969
- Mfr. Part No.:
- FQA70N10
- Brand:
- onsemi
Bulk discount available
Subtotal (1 tube of 30 units)*
Kr.763 50
(exc. VAT)
Kr.954 30
(inc. VAT)
FREE delivery for online orders over 500,00 kr
In Stock
- Plus 420 unit(s) shipping from 29. desember 2025
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Tube* |
|---|---|---|
| 30 - 30 | Kr. 25,45 | Kr. 763,50 |
| 60 - 120 | Kr. 24,688 | Kr. 740,64 |
| 150 - 270 | Kr. 23,925 | Kr. 717,75 |
| 300 + | Kr. 22,911 | Kr. 687,33 |
*price indicative
- RS Stock No.:
- 146-1969
- Mfr. Part No.:
- FQA70N10
- Brand:
- onsemi
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | onsemi | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 70A | |
| Maximum Drain Source Voltage Vds | 100V | |
| Package Type | TO-3PN | |
| Series | QFET | |
| Mount Type | Through Hole | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 23mΩ | |
| Channel Mode | Enhancement | |
| Typical Gate Charge Qg @ Vgs | 85nC | |
| Maximum Power Dissipation Pd | 214W | |
| Forward Voltage Vf | 1.5V | |
| Maximum Gate Source Voltage Vgs | 25 V | |
| Minimum Operating Temperature | -55°C | |
| Maximum Operating Temperature | 175°C | |
| Height | 18.9mm | |
| Standards/Approvals | No | |
| Width | 5 mm | |
| Length | 15.8mm | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand onsemi | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 70A | ||
Maximum Drain Source Voltage Vds 100V | ||
Package Type TO-3PN | ||
Series QFET | ||
Mount Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 23mΩ | ||
Channel Mode Enhancement | ||
Typical Gate Charge Qg @ Vgs 85nC | ||
Maximum Power Dissipation Pd 214W | ||
Forward Voltage Vf 1.5V | ||
Maximum Gate Source Voltage Vgs 25 V | ||
Minimum Operating Temperature -55°C | ||
Maximum Operating Temperature 175°C | ||
Height 18.9mm | ||
Standards/Approvals No | ||
Width 5 mm | ||
Length 15.8mm | ||
Automotive Standard No | ||
QFET® N-Channel MOSFET, over 31A, Fairchild Semiconductor
Fairchild Semiconductor’s new QFET® Planar MOSFETs use advanced, proprietary technology to offer best-in-class operating performance for a wide range of applications, including power supplies, PFC (Power Factor Correction), DC-DC Converters, Plasma Display Panels (PDP), lighting ballasts, and motion control.
They offer reduced on-state loss by lowering on-resistance (RDS(on)), and reduced switching loss by lowering gate charge (Qg) and output capacitance (Coss). By using Advanced QFET® process technology, Fairchild can offer an improved figure of merit (FOM) over competing Planar MOSFET devices.
MOSFET Transistors, ON Semi
ON Semi offers a substantial portfolio of MOSFET devices that includes high-voltage (>250V) and low-voltage (<250V) types. The Advanced silicon technology provides smaller die sizes, which it is incorporated into multiple industry-standard and thermally-enhanced packages.
ON Semi MOSFETs provide superior design reliability from reduced voltage spikes and overshoot, to lower junction capacitance and reverse recovery charge, to elimination of additional external components to keep systems up and running longer.
Related links
- onsemi QFET N-Channel MOSFET 100 V, 3-Pin TO-3PN FQA70N10
- onsemi QFET N-Channel MOSFET 100 V, 3-Pin TO-3PN FQA140N10
- onsemi QFET N-Channel MOSFET 1000 V, 3-Pin TO-3PN FQA8N100C
- onsemi QFET N-Channel MOSFET 600 V, 3-Pin TO-3PN FQA24N60
- onsemi QFET N-Channel MOSFET 250 V, 3-Pin TO-3PN FQA40N25
- onsemi QFET N-Channel MOSFET 300 V, 3-Pin TO-3PN FQA44N30
- onsemi QFET N-Channel MOSFET 100 V, 3-Pin TO-220AB FQP44N10
- onsemi QFET N-Channel MOSFET 100 V, 3-Pin IPAK FQU13N10LTU