Nexperia Type P-Channel MOSFET, -3.2 A, -12 V Enhancement, 4-Pin DFN PMXB65UPEZ

RS Stock No.:: 151-3145
Mfr. Part No.:: PMXB65UPEZ
Brand:: Nexperia

Nexperia Type P-Channel MOSFET, -3.2 A, -12 V Enhancement, 4-Pin DFN PMXB65UPEZ

Subtotal (1 pack of 50 units)*

Kr.128 70

(exc. VAT)

Kr.160 90

(inc. VAT)

FREE delivery for online orders over 500,00 kr

In Stock

50 unit(s) ready to ship
Plus 10 000 unit(s) shipping from 06. mai 2026

Need more? Click ‘Check delivery dates’ to find extra stock and lead times.

Units	Per unit	Per Pack*
50 +	Kr. 2,574	Kr. 128,70

*price indicative

RS Stock No.:: 151-3145
Mfr. Part No.:: PMXB65UPEZ
Brand:: Nexperia

Specifications

Technical Reference

Legislation and Compliance

Product Details

Find similar products by selecting one or more attributes.

Select all	Attribute	Value
	Brand	Nexperia
	Product Type	MOSFET
	Channel Type	Type P
	Maximum Continuous Drain Current Id	-3.2A
	Maximum Drain Source Voltage Vds	-12V
	Package Type	DFN
	Mount Type	Surface
	Pin Count	4
	Maximum Drain Source Resistance Rds	880mΩ
	Channel Mode	Enhancement
	Minimum Operating Temperature	-55°C
	Maximum Power Dissipation Pd	8.33W
	Typical Gate Charge Qg @ Vgs	6.7nC
	Maximum Gate Source Voltage Vgs	8 V
	Maximum Operating Temperature	150°C
	Standards/Approvals	No
	Height	0.36mm
	Length	1.15mm
	Width	1.05 mm
	Automotive Standard	No

	Select all
	Brand Nexperia
	Product Type MOSFET
	Channel Type Type P
	Maximum Continuous Drain Current Id -3.2A
	Maximum Drain Source Voltage Vds -12V
	Package Type DFN
	Mount Type Surface
	Pin Count 4
	Maximum Drain Source Resistance Rds 880mΩ
	Channel Mode Enhancement
	Minimum Operating Temperature -55°C
	Maximum Power Dissipation Pd 8.33W
	Typical Gate Charge Qg @ Vgs 6.7nC
	Maximum Gate Source Voltage Vgs 8 V
	Maximum Operating Temperature 150°C
	Standards/Approvals No
	Height 0.36mm
	Length 1.15mm
	Width 1.05 mm
	Automotive Standard No

P-channel MOSFETs, The perfect fit for your design when N-channels simply aren’t suitable, Our extensive MOSFET catalog also includes many P-channel device families, based on Nexperia’s leading Trench technology. Rated from 12 V to 70 V and housed in low- and medium-power packages, they offer our familiar blend of high efficiency and high reliability.

12 V, P-channel Trench MOSFET, P-channel enhancement mode Field-Effect Transistor (FET) in a leadless ultra small DFN1010D-3 (SOT1215) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.

Trench MOSFET technology

Leadless ultra small and ultra thin SMD plastic package: 1.1 x 1.0 x 0.37 mm

Exposed drain pad for excellent thermal conduction

ElectroStatic Discharge (ESD) protection 1.5 kV HBM

Drain-source on-state resistance RDSon = 59 mΩ

Very low gate-source threshold voltage for portable applications VGS(th) = -0.68 V

Nexperia Type P-Channel MOSFET, -3.2 A, -12 V Enhancement, 4-Pin DFN PMXB65UPEZ

FREE delivery for online orders over 500,00 kr

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