Nexperia BUK9M2880E Type N-Channel MOSFET, 33 A, 80 V Enhancement, 4-Pin LFPAK

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Subtotal (1 reel of 1500 units)*

Kr.6 178 50 

(exc. VAT)

Kr.7 723 50 

(inc. VAT)

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Units
Per unit
Per Reel*
1500 +Kr. 4,119Kr. 6 178,50

*price indicative

RS Stock No.:
153-0762
Mfr. Part No.:
BUK9M28-80EX
Brand:
Nexperia
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Brand

Nexperia

Channel Type

Type N

Product Type

MOSFET

Maximum Continuous Drain Current Id

33A

Maximum Drain Source Voltage Vds

80V

Package Type

LFPAK

Series

BUK9M2880E

Mount Type

Surface

Pin Count

4

Maximum Drain Source Resistance Rds

70mΩ

Channel Mode

Enhancement

Minimum Operating Temperature

-55°C

Maximum Power Dissipation Pd

75W

Maximum Gate Source Voltage Vgs

15 V

Typical Gate Charge Qg @ Vgs

6.1nC

Maximum Operating Temperature

175°C

Height

0.9mm

Width

2.6 mm

Length

3.4mm

Standards/Approvals

No

Automotive Standard

AEC-Q101

N-channel 80 V, 28 mΩ logic level MOSFET in LFPAK33, Logic level N-channel MOSFET in an LFPAK33 (Power33) package using TrenchMOS technology. This product has been designed and qualified to AEC Q101 standard for use in high performance automotive applications.

Q101 compliant

Repetitive avalanche rated

Suitable for thermally demanding environments due to 175 °C rating

True logic level gate with VGS(th) rating of greater than 0.5 V at 175 °C

12 V, 24 V and 48 V automotive systems

Motors, lamps and solenoid control

Transmission control

Ultra high performance power switching

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