Nexperia Type P-Channel MOSFET, -5.3 A, -20 V Enhancement, 3-Pin SOT-23 PMV30XPEAR

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Subtotal (1 pack of 25 units)*

Kr. 116,925

(exc. VAT)

Kr. 146,15

(inc. VAT)

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Temporarily out of stock
  • 3 000 unit(s) shipping from 22 July 2026
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Units
Per unit
Per Pack*
25 - 225Kr. 4,677Kr. 116,93
250 - 600Kr. 2,466Kr. 61,65
625 - 1225Kr. 2,142Kr. 53,55
1250 - 2475Kr. 1,821Kr. 45,53
2500 +Kr. 1,78Kr. 44,50

*price indicative

Packaging Options:
RS Stock No.:
153-1886
Mfr. Part No.:
PMV30XPEAR
Brand:
Nexperia
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Brand

Nexperia

Channel Type

Type P

Product Type

MOSFET

Maximum Continuous Drain Current Id

-5.3A

Maximum Drain Source Voltage Vds

-20V

Package Type

SOT-23

Mount Type

Surface

Pin Count

3

Maximum Drain Source Resistance Rds

57mΩ

Channel Mode

Enhancement

Typical Gate Charge Qg @ Vgs

11nC

Maximum Power Dissipation Pd

5.44W

Minimum Operating Temperature

-55°C

Maximum Operating Temperature

150°C

Height

1mm

Standards/Approvals

No

Length

3mm

Automotive Standard

AEC-Q101

20 V, P-channel Trench MOSFET, P-channel enhancement mode Field-Effect Transistor (FET) in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.

Trench MOSFET technology

Very fast switching

Enhanced power dissipation capability: Ptot = 980 mW

ElectroStatic Discharge (ESD) protection > 2 kV HBM

AEC-Q101 qualified

Relay driver

High-speed line driver

High-side loadswitch

Switching circuits

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