Vishay Si2366DS Type N-Channel MOSFET, 5.8 A, 30 V Enhancement, 3-Pin SOT-23

RS Stock No.:: 165-6910
Mfr. Part No.:: SI2366DS-T1-GE3
Brand:: Vishay

Vishay Si2366DS Type N-Channel MOSFET, 5.8 A, 30 V Enhancement, 3-Pin SOT-23

Subtotal (1 reel of 3000 units)*

Kr. 5 148,00

(exc. VAT)

Kr. 6 435,00

(inc. VAT)

FREE delivery for online orders over 750,00 kr

Temporarily out of stock

Shipping from 26 October 2026

Need more? Click ‘Check delivery dates’ to find extra stock and lead times.

Units	Per unit	Per Reel*
3000 +	Kr. 1,716	Kr. 5 148,00

*price indicative

RS Stock No.:: 165-6910
Mfr. Part No.:: SI2366DS-T1-GE3
Brand:: Vishay

Specifications

Technical Reference

Legislation and Compliance

Product Details

Find similar products by selecting one or more attributes.

Select all	Attribute	Value
	Brand	Vishay
	Channel Type	Type N
	Product Type	MOSFET
	Maximum Continuous Drain Current Id	5.8A
	Maximum Drain Source Voltage Vds	30V
	Package Type	SOT-23
	Series	Si2366DS
	Mount Type	Surface
	Pin Count	3
	Maximum Drain Source Resistance Rds	42mΩ
	Channel Mode	Enhancement
	Maximum Gate Source Voltage Vgs	20V
	Typical Gate Charge Qg @ Vgs	6.4nC
	Minimum Operating Temperature	-55°C
	Forward Voltage Vf	0.85V
	Maximum Power Dissipation Pd	2.1W
	Maximum Operating Temperature	150°C
	Standards/Approvals	RoHS
	Length	3.04mm
	Width	1.4mm
	Height	1.02mm
	Automotive Standard	No

	Select all
	Brand Vishay
	Channel Type Type N
	Product Type MOSFET
	Maximum Continuous Drain Current Id 5.8A
	Maximum Drain Source Voltage Vds 30V
	Package Type SOT-23
	Series Si2366DS
	Mount Type Surface
	Pin Count 3
	Maximum Drain Source Resistance Rds 42mΩ
	Channel Mode Enhancement
	Maximum Gate Source Voltage Vgs 20V
	Typical Gate Charge Qg @ Vgs 6.4nC
	Minimum Operating Temperature -55°C
	Forward Voltage Vf 0.85V
	Maximum Power Dissipation Pd 2.1W
	Maximum Operating Temperature 150°C
	Standards/Approvals RoHS
	Length 3.04mm
	Width 1.4mm
	Height 1.02mm
	Automotive Standard No

COO (Country of Origin):: CN

Vishay Si2366DS Series MOSFET, 30V Maximum Drain Source Voltage, 5.8A Maximum Continuous Drain Current - SI2366DS-T1-GE3

This MOSFET is a low-voltage N-channel semiconductor device designed for surface-mounted power switching in Compact electronic assemblies. It operates within a moderate voltage range and supports temperature extremes, making it suitable for dense board-level designs where small footprint and controlled switching behaviour are required.

Features and Benefits:

• 42mΩ Rds(on) yields low conduction losses during switching
• 5.8A continuous drain current supports moderate load currents
• 30V drain-source rating enables low-voltage power rails
• 6.4nC typical gate charge permits fast gate transitions
• 2.1W power dissipation allows for sustained thermal loading
• 150°C maximum operating temperature endures elevated environments

Applications

• Suitable for DC step-down converters in automation equipment
• Ideal for load switching in control and Interface modules
• Used for motor driver stages in small electromechanical systems
• Can be used for battery protection and power-path management
• Used with Compact consumer power supplies requiring surface-mount parts

What mounting style does it require for PCB assembly?

It is supplied for surface-mount placement in a three-pin package compatible with standard SOT-23 footprints.

What gate voltage endurance should designers expect?

The device tolerates gate-source voltages up to 20V, so gate drive must remain within that limit.

How wide an ambient temperature range can it operate in?

It is specified to operate down to -55°C and up to 150°C junction temperature for broad thermal margins.

What mechanical package size considerations are there for layout?

The package measures approximately 3.04mm length, 1.4mm width and 1.02mm height for footprint and clearance planning.

Are there environmental or regulatory characteristics to note?

The component conforms to RoHS requirements for reduced hazardous substances.