onsemi NDS332 Type P-Channel MOSFET, 1 A, 20 V Enhancement, 3-Pin SOT-23

Subtotal (1 reel of 3000 units)*

Kr.4 242 00 

(exc. VAT)

Kr.5 304 00 

(inc. VAT)

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3000 +Kr. 1,414Kr. 4 242,00

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RS Stock No.:
166-1811
Mfr. Part No.:
NDS332P
Brand:
onsemi
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Brand

onsemi

Product Type

MOSFET

Channel Type

Type P

Maximum Continuous Drain Current Id

1A

Maximum Drain Source Voltage Vds

20V

Package Type

SOT-23

Series

NDS332

Mount Type

Surface

Pin Count

3

Maximum Drain Source Resistance Rds

300mΩ

Channel Mode

Enhancement

Maximum Gate Source Voltage Vgs

8 V

Maximum Power Dissipation Pd

500mW

Forward Voltage Vf

-1.2V

Typical Gate Charge Qg @ Vgs

3.7nC

Minimum Operating Temperature

-55°C

Maximum Operating Temperature

150°C

Height

0.94mm

Standards/Approvals

No

Length

2.92mm

Width

1.4 mm

Automotive Standard

No

Enhancement Mode P-Channel MOSFET, ON Semiconductor


ON Semiconductors range of P-Channel MOSFETS are produced using ON Semi’s proprietary, high cell density, DMOS technology. This very high density process has been designed to minimize on-state resistance to provide a rugged and reliable performance for fast switching.

Features and Benefits:


• Voltage controlled P-Channel small signal switch

• High-Density cell design

• High saturation current

• Superior switching

• Great rugged and reliable performance

• DMOS technology

Applications:


• Load Switching

• DC/DC converter

• Battery protection

• Power management control

• DC motor control

MOSFET Transistors, ON Semi


ON Semi offers a substantial portfolio of MOSFET devices that includes high-voltage (>250V) and low-voltage (<250V) types. The Advanced silicon technology provides smaller die sizes, which it is incorporated into multiple industry-standard and thermally-enhanced packages.

ON Semi MOSFETs provide superior design reliability from reduced voltage spikes and overshoot, to lower junction capacitance and reverse recovery charge, to elimination of additional external components to keep systems up and running longer.

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