onsemi Isolated PowerTrench 2 Type P-Channel MOSFET, 2.3 A, 60 V Enhancement, 8-Pin SOIC

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Subtotal (1 reel of 2500 units)*

Kr.5 542 50 

(exc. VAT)

Kr.6 927 50 

(inc. VAT)

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Units
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Per Reel*
2500 +Kr. 2,217Kr. 5 542,50

*price indicative

RS Stock No.:
166-2654
Mfr. Part No.:
NDS9948
Brand:
onsemi
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Brand

onsemi

Channel Type

Type P

Product Type

MOSFET

Maximum Continuous Drain Current Id

2.3A

Maximum Drain Source Voltage Vds

60V

Series

PowerTrench

Package Type

SOIC

Mount Type

Surface

Pin Count

8

Maximum Drain Source Resistance Rds

500mΩ

Channel Mode

Enhancement

Minimum Operating Temperature

-55°C

Maximum Gate Source Voltage Vgs

20 V

Maximum Power Dissipation Pd

2W

Forward Voltage Vf

-0.8V

Typical Gate Charge Qg @ Vgs

9nC

Transistor Configuration

Isolated

Maximum Operating Temperature

175°C

Length

5mm

Height

1.5mm

Width

4 mm

Standards/Approvals

No

Number of Elements per Chip

2

Automotive Standard

No

PowerTrench® Dual P-Channel MOSFET, Fairchild Semiconductor


PowerTrench® MOSFETs are optimised power switches that offer increase of system efficiency and power density. They combine small gate charge(Qg), small reverse recovery charge(Qrr) and soft reverse recovery body diode, which contributes to fast switching of synchronous rectification in AC/DC power supplies.

The latest PowerTrench® MOSFETs, employ shielded-gate structure that provides charge balance. By utilizing this Advanced technology, the FOM (Figure of Merit) of these devices is significant lower than that of previous generation.

Soft body diode performance of the PowerTrench® MOSFETs is able to eliminate snubber circuit or replace a higher voltage rating MOSFET.

MOSFET Transistors, ON Semi


ON Semi offers a substantial portfolio of MOSFET devices that includes high-voltage (>250V) and low-voltage (<250V) types. The Advanced silicon technology provides smaller die sizes, which it is incorporated into multiple industry-standard and thermally-enhanced packages.

ON Semi MOSFETs provide superior design reliability from reduced voltage spikes and overshoot, to lower junction capacitance and reverse recovery charge, to elimination of additional external components to keep systems up and running longer.

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