onsemi Type N-Channel MOSFET, 6.3 A, 30 V Enhancement, 3-Pin SOT-223

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Subtotal (1 reel of 4000 units)*

Kr.12 356 00 

(exc. VAT)

Kr.15 444 00 

(inc. VAT)

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Per Reel*
4000 +Kr. 3,089Kr. 12 356,00

*price indicative

RS Stock No.:
166-2704
Mfr. Part No.:
FDT439N
Brand:
onsemi
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Brand

onsemi

Channel Type

Type N

Product Type

MOSFET

Maximum Continuous Drain Current Id

6.3A

Maximum Drain Source Voltage Vds

30V

Package Type

SOT-223

Mount Type

Surface

Pin Count

3

Maximum Drain Source Resistance Rds

0.072Ω

Channel Mode

Enhancement

Forward Voltage Vf

1.2V

Maximum Power Dissipation Pd

3W

Minimum Operating Temperature

-55°C

Maximum Gate Source Voltage Vgs

±8 V

Typical Gate Charge Qg @ Vgs

15nC

Maximum Operating Temperature

150°C

Width

3.56 mm

Standards/Approvals

No

Length

6.5mm

Height

1.6mm

Automotive Standard

No

Enhancement Mode N-Channel MOSFET, Fairchild Semiconductor


Enhancement Mode Field Effect Transistors (FET) are produced using Fairchild’s proprietary, high cell density, DMOS technology. This high density process has been designed to minimise on-state resistance, provide rugged and reliable performance and fast switching.

MOSFET Transistors, ON Semi


ON Semi offers a substantial portfolio of MOSFET devices that includes high-voltage (>250V) and low-voltage (<250V) types. The Advanced silicon technology provides smaller die sizes, which it is incorporated into multiple industry-standard and thermally-enhanced packages.

ON Semi MOSFETs provide superior design reliability from reduced voltage spikes and overshoot, to lower junction capacitance and reverse recovery charge, to elimination of additional external components to keep systems up and running longer.

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