Infineon HEXFET Type N-Channel MOSFET, 128 A, 75 V Enhancement, 3-Pin TO-263

View all MOSFETs
Bulk discount available

Subtotal (1 reel of 800 units)*

Kr.12 849 60 

(exc. VAT)

Kr.16 062 40 

(inc. VAT)

Add to Basket
Select or type quantity
In Stock
  • 800 unit(s) ready to ship
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units
Per unit
Per Reel*
800 - 800Kr. 16,062Kr. 12 849,60
1600 +Kr. 15,259Kr. 12 207,20

*price indicative

RS Stock No.:
168-6010
Mfr. Part No.:
IRFS3307ZTRLPBF
Brand:
Infineon
Find similar products by selecting one or more attributes.
Select all

Brand

Infineon

Product Type

MOSFET

Channel Type

Type N

Maximum Continuous Drain Current Id

128A

Maximum Drain Source Voltage Vds

75V

Series

HEXFET

Package Type

TO-263

Mount Type

Surface

Pin Count

3

Maximum Drain Source Resistance Rds

5.8mΩ

Channel Mode

Enhancement

Forward Voltage Vf

1.3V

Maximum Gate Source Voltage Vgs

20 V

Maximum Power Dissipation Pd

230W

Minimum Operating Temperature

-55°C

Typical Gate Charge Qg @ Vgs

79nC

Maximum Operating Temperature

175°C

Length

10.67mm

Standards/Approvals

No

Height

4.83mm

Width

9.65 mm

Automotive Standard

No

N-Channel Power MOSFET 60V to 80V, Infineon


The Infineon range of discrete HEXFET® power MOSFETs includes N-channel devices in surface mount and leaded packages. And form factors that can address almost any board layout and thermal design challenge. Across the range Benchmark on resistance drives down conduction losses, allowing designers to deliver optimum system efficiency.

MOSFET Transistors, Infineon


Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.

Related links