Nexperia PMV20XNE Type N-Channel MOSFET, 7.2 A, 30 V Enhancement, 3-Pin SOT-23

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Subtotal (1 reel of 3000 units)*

Kr.4 665 00 

(exc. VAT)

Kr.5 832 00 

(inc. VAT)

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Units
Per unit
Per Reel*
3000 +Kr. 1,555Kr. 4 665,00

*price indicative

RS Stock No.:
170-4865
Mfr. Part No.:
PMV20XNER
Brand:
Nexperia
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Brand

Nexperia

Product Type

MOSFET

Channel Type

Type N

Maximum Continuous Drain Current Id

7.2A

Maximum Drain Source Voltage Vds

30V

Series

PMV20XNE

Package Type

SOT-23

Mount Type

Surface

Pin Count

3

Maximum Drain Source Resistance Rds

38mΩ

Channel Mode

Enhancement

Maximum Power Dissipation Pd

6.94W

Typical Gate Charge Qg @ Vgs

12.4nC

Maximum Gate Source Voltage Vgs

12 V

Minimum Operating Temperature

-55°C

Maximum Operating Temperature

150°C

Height

1mm

Length

3mm

Standards/Approvals

No

Width

1.4 mm

Automotive Standard

No

COO (Country of Origin):
CN
Robust interfacing between asynchronous and synchronous systems. Flip-flops are Basic storage elements in digital electronics. By only allowing the output to change on an edge transition, flip-flops provide a robust Interface between asynchronous and synchronous systems. With a choice of either positive or negative edge triggered options they provide added design flexibility.

N-channel enhancement mode Field-Effect Transistor (FET) in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.

Trench MOSFET technology

Low threshold voltage

Enhanced power dissipation capability of 1200 mW

ElectroStatic Discharge (ESD) protection: 2 kV HBM

Target applications

Relay driver

High-speed line driver

Low-side load switch

Switching circuits

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