Toshiba Type N-Channel MOSFET, 100 A, 40 V Enhancement, 3-Pin TO-252 TK100S04N1L

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Subtotal (1 pack of 5 units)*

Kr.101 82 

(exc. VAT)

Kr.127 275 

(inc. VAT)

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Units
Per unit
Per Pack*
5 - 20Kr. 20,364Kr. 101,82
25 - 95Kr. 17,458Kr. 87,29
100 - 995Kr. 15,284Kr. 76,42
1000 +Kr. 13,59Kr. 67,95

*price indicative

Packaging Options:
RS Stock No.:
171-2499
Mfr. Part No.:
TK100S04N1L
Brand:
Toshiba
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Brand

Toshiba

Product Type

MOSFET

Channel Type

Type N

Maximum Continuous Drain Current Id

100A

Maximum Drain Source Voltage Vds

40V

Package Type

TO-252

Mount Type

Surface

Pin Count

3

Maximum Drain Source Resistance Rds

4.5mΩ

Channel Mode

Enhancement

Maximum Gate Source Voltage Vgs

20 V

Typical Gate Charge Qg @ Vgs

76nC

Maximum Power Dissipation Pd

180W

Forward Voltage Vf

-1.2V

Minimum Operating Temperature

-55°C

Maximum Operating Temperature

175°C

Length

6.5mm

Width

7 mm

Standards/Approvals

No

Height

2.3mm

Automotive Standard

AEC-Q101

RoHS Status: Not Applicable

COO (Country of Origin):
JP
Applications

Automotive

Switching Voltage Regulators

Motor Drivers

Features

Low drain-source on-resistance: RDS(ON) = 1.9 mΩ (typ.) (VGS = 10 V)

Low leakage current: IDSS = 10 μA (max) (VDS = 40 V)

Enhancement mode: Vth = 1.5 to 2.5 V (VDS = 10 V, ID = 0.5 mA)

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