Toshiba 2 N-Channel MOSFET, 180 mA, 20 V Enhancement, 6-Pin SOT-563 SSM6N35FE
- RS Stock No.:
- 171-2510
- Mfr. Part No.:
- SSM6N35FE
- Brand:
- Toshiba
Currently unavailable
We don’t know if this item will be back in stock, it is being discontinued by the manufacturer.
- RS Stock No.:
- 171-2510
- Mfr. Part No.:
- SSM6N35FE
- Brand:
- Toshiba
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Toshiba | |
| Product Type | MOSFET | |
| Channel Type | N | |
| Maximum Continuous Drain Current Id | 180mA | |
| Maximum Drain Source Voltage Vds | 20V | |
| Package Type | SOT-563 | |
| Mount Type | Surface Mount | |
| Pin Count | 6 | |
| Maximum Drain Source Resistance Rds | 20Ω | |
| Channel Mode | Enhancement | |
| Maximum Gate Source Voltage Vgs | 10V | |
| Maximum Power Dissipation Pd | 150mW | |
| Maximum Operating Temperature | 150°C | |
| Length | 1.2mm | |
| Width | 1.6mm | |
| Height | 0.55mm | |
| Number of Elements per Chip | 2 | |
| Select all | ||
|---|---|---|
Brand Toshiba | ||
Product Type MOSFET | ||
Channel Type N | ||
Maximum Continuous Drain Current Id 180mA | ||
Maximum Drain Source Voltage Vds 20V | ||
Package Type SOT-563 | ||
Mount Type Surface Mount | ||
Pin Count 6 | ||
Maximum Drain Source Resistance Rds 20Ω | ||
Channel Mode Enhancement | ||
Maximum Gate Source Voltage Vgs 10V | ||
Maximum Power Dissipation Pd 150mW | ||
Maximum Operating Temperature 150°C | ||
Length 1.2mm | ||
Width 1.6mm | ||
Height 0.55mm | ||
Number of Elements per Chip 2 | ||
- COO (Country of Origin):
- TH
1.2-V drive
N-ch 2-in-1
Low ON-resistance: Ron = 20 Ω (max) (@VGS = 1.2 V)
Ron = 8 Ω (max) (@VGS = 1.5 V)
Ron = 4 Ω (max) (@VGS = 2.5 V)
Ron = 3 Ω (max) (@VGS = 4.0 V)
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