Name: ROHM RF4E070GN N-Channel MOSFET, 7 A, 30 V, 8-Pin HUML2020L RF4E070GNTR
Brand: ROHM
SKU: 172-0402
Price: 1.90 NOK
Availability: Discontinued

Specifications

Technical Reference

Legislation and Compliance

Product Details

Find similar products by selecting one or more attributes.

Select all	Attribute	Value
	Brand	ROHM
	Channel Type	N
	Maximum Continuous Drain Current	7 A
	Maximum Drain Source Voltage	30 V
	Package Type	HUML2020L
	Series	RF4E070GN
	Mounting Type	Surface Mount
	Pin Count	8
	Maximum Drain Source Resistance	33 mΩ
	Channel Mode	Enhancement
	Maximum Gate Threshold Voltage	2.5V
	Minimum Gate Threshold Voltage	1V
	Maximum Power Dissipation	2 W
	Transistor Configuration	Single
	Maximum Gate Source Voltage	±20 V
	Length	2.1mm
	Maximum Operating Temperature	+150 °C
	Width	2.1mm
	Typical Gate Charge @ Vgs	4.8 nC @ 10 V
	Number of Elements per Chip	1
	Forward Diode Voltage	1.2V
	Height	0.6mm
	Minimum Operating Temperature	-55 °C

	Select all
	Brand ROHM
	Channel Type N
	Maximum Continuous Drain Current 7 A
	Maximum Drain Source Voltage 30 V
	Package Type HUML2020L
	Series RF4E070GN
	Mounting Type Surface Mount
	Pin Count 8
	Maximum Drain Source Resistance 33 mΩ
	Channel Mode Enhancement
	Maximum Gate Threshold Voltage 2.5V
	Minimum Gate Threshold Voltage 1V
	Maximum Power Dissipation 2 W
	Transistor Configuration Single
	Maximum Gate Source Voltage ±20 V
	Length 2.1mm
	Maximum Operating Temperature +150 °C
	Width 2.1mm
	Typical Gate Charge @ Vgs 4.8 nC @ 10 V
	Number of Elements per Chip 1
	Forward Diode Voltage 1.2V
	Height 0.6mm
	Minimum Operating Temperature -55 °C

Power MOSFETs are made as low ON-resistance devices by the micro-processing technologies useful for wide range of applications. Broad lineup covering compact types, high-power types and complex types to meet various needs in the market.

Low on - resistance.
High Power Small Mold Package (HUML2020L8).
Pb-free lead plating
Halogen Free

ROHM RF4E070GN N-Channel MOSFET, 7 A, 30 V, 8-Pin HUML2020L RF4E070GNTR

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