onsemi Dual NVMFD5C650NL 2 Type N-Channel MOSFET, 111 A, 60 V Enhancement, 8-Pin DFN NVMFD5C650NLWFT1G
- RS Stock No.:
- 172-3345
- Mfr. Part No.:
- NVMFD5C650NLWFT1G
- Brand:
- onsemi
Subtotal (1 pack of 10 units)*
Kr.201 85
(exc. VAT)
Kr.252 31
(inc. VAT)
FREE delivery for online orders over 500,00 kr
Last RS stock
- Final 1 500 unit(s), ready to ship
Units | Per unit | Per Pack* |
|---|---|---|
| 10 + | Kr. 20,185 | Kr. 201,85 |
*price indicative
- RS Stock No.:
- 172-3345
- Mfr. Part No.:
- NVMFD5C650NLWFT1G
- Brand:
- onsemi
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | onsemi | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 111A | |
| Maximum Drain Source Voltage Vds | 60V | |
| Package Type | DFN | |
| Series | NVMFD5C650NL | |
| Mount Type | Surface | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 5.8mΩ | |
| Channel Mode | Enhancement | |
| Forward Voltage Vf | 0.9V | |
| Minimum Operating Temperature | -55°C | |
| Typical Gate Charge Qg @ Vgs | 16nC | |
| Maximum Power Dissipation Pd | 125W | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Maximum Operating Temperature | 175°C | |
| Transistor Configuration | Dual | |
| Width | 5.1 mm | |
| Standards/Approvals | No | |
| Height | 1.05mm | |
| Length | 6.1mm | |
| Number of Elements per Chip | 2 | |
| Automotive Standard | AEC-Q101 | |
| Select all | ||
|---|---|---|
Brand onsemi | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 111A | ||
Maximum Drain Source Voltage Vds 60V | ||
Package Type DFN | ||
Series NVMFD5C650NL | ||
Mount Type Surface | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 5.8mΩ | ||
Channel Mode Enhancement | ||
Forward Voltage Vf 0.9V | ||
Minimum Operating Temperature -55°C | ||
Typical Gate Charge Qg @ Vgs 16nC | ||
Maximum Power Dissipation Pd 125W | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Maximum Operating Temperature 175°C | ||
Transistor Configuration Dual | ||
Width 5.1 mm | ||
Standards/Approvals No | ||
Height 1.05mm | ||
Length 6.1mm | ||
Number of Elements per Chip 2 | ||
Automotive Standard AEC-Q101 | ||
Automotive Power MOSFET in a 5x6mm flat lead package designed for compact and efficient designs and including high thermal performance. Wettable Flank Option available for Enhanced Optical Inspection. MOSFET and PPAP capable suitable for automotive applications.
Small Footprint (5x6 mm)
Compact Design
Low rDS(on)
Minimize Conduction Loss
Low QG and Capacitance
Minimize Driver Losses
NVMFD5C446NLWF − Wettable Flank Option
Enhanced Optical Inspection
PPAP Capable
Applications
Solenoid driver
Low side / high side driver
Automotive engine controllers
Antilock braking systems
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