onsemi Single SiC Power Module, 28 A, 3-Pin TO-220 FFSP3065A

RS Stock No.:: 172-8971
Mfr. Part No.:: FFSP3065A
Brand:: onsemi

onsemi Single SiC Power Module, 28 A, 3-Pin TO-220 FFSP3065A

Bulk discount available

Subtotal (1 pack of 2 units)*

Kr.192 08

(exc. VAT)

Kr.240 10

(inc. VAT)

FREE delivery for online orders over 500,00 kr

Last RS stock

Final 198 unit(s), ready to ship

Units	Per unit	Per Pack*
2 - 8	Kr. 96,04	Kr. 192,08
10 - 98	Kr. 82,825	Kr. 165,65
100 - 248	Kr. 77,22	Kr. 154,44
250 - 498	Kr. 75,275	Kr. 150,55
500 +	Kr. 73,39	Kr. 146,78

*price indicative

RS Stock No.:: 172-8971
Mfr. Part No.:: FFSP3065A
Brand:: onsemi

Specifications

Technical Reference

Legislation and Compliance

Product Details

Find similar products by selecting one or more attributes.

Select all	Attribute	Value
	Brand	onsemi
	Product Type	SiC Power Module
	Maximum Continuous Drain Current Id	28A
	Package Type	TO-220
	Mount Type	Through Hole
	Pin Count	3
	Minimum Operating Temperature	-55°C
	Maximum Power Dissipation Pd	240W
	Forward Voltage Vf	2.4V
	Maximum Operating Temperature	175°C
	Transistor Configuration	Single
	Width	4.8 mm
	Height	16.51mm
	Standards/Approvals	No
	Length	10.67mm
	Automotive Standard	No

	Select all
	Brand onsemi
	Product Type SiC Power Module
	Maximum Continuous Drain Current Id 28A
	Package Type TO-220
	Mount Type Through Hole
	Pin Count 3
	Minimum Operating Temperature -55°C
	Maximum Power Dissipation Pd 240W
	Forward Voltage Vf 2.4V
	Maximum Operating Temperature 175°C
	Transistor Configuration Single
	Width 4.8 mm
	Height 16.51mm
	Standards/Approvals No
	Length 10.67mm
	Automotive Standard No

Silicon Carbide (SiC) Schottky Diode – EliteSiC, 30 A, 650 V, D1, TO-220-2L
Silicon Carbide (SiC) Schottky Diode – EliteSiC, 30 A, 650 V, D1, TO-220-2L

The ON Semiconductor TO-220-2L silicon carbide (SiC) Schottky diode is the latest product that uses a completely new technology that provides superior switching performance and higher reliability to silicon. The diode has many advanced features like temperature independent switching characteristics and excellent thermal performance that makes it undoubtedly the next-generation power semiconductor. This diode offers many benefits that include the highest efficiency, faster-operating frequency, increased power density, reduced EMI and reduced system size and cost.

Features and Benefits

• Avalanche rated 180mJ

• Ease of paralleling

• High surge current capacity

• No reverse recovery/no forward recovery

• Operating temperature ranges between -55°C and 175°C

• Positive temperature coefficient

Applications

• EV charger

• General purpose

• Industrial power

• PFC

• Power switching circuits

• SMPS

• Solar inverter

• UPS

• Welding

Certifications

• ANSI/ESD S20.20:2014

• BS EN 61340-5-1:2007