Vishay Siliconix TrenchFET Type P-Channel MOSFET, 2.68 A, 20 V Enhancement, 6-Pin SC-70 SQA401EEJ-T1_GE3
- RS Stock No.:
- 178-3886
- Mfr. Part No.:
- SQA401EEJ-T1_GE3
- Brand:
- Vishay Siliconix
Bulk discount available
Subtotal (1 pack of 25 units)*
Kr. 144,50
(exc. VAT)
Kr. 180,50
(inc. VAT)
FREE delivery for online orders over 500,00 kr
Temporarily out of stock
- Shipping from 10 August 2026
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Pack* |
|---|---|---|
| 25 - 75 | Kr. 5,78 | Kr. 144,50 |
| 100 - 475 | Kr. 4,274 | Kr. 106,85 |
| 500 - 975 | Kr. 3,464 | Kr. 86,60 |
| 1000 + | Kr. 2,805 | Kr. 70,13 |
*price indicative
- RS Stock No.:
- 178-3886
- Mfr. Part No.:
- SQA401EEJ-T1_GE3
- Brand:
- Vishay Siliconix
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Vishay Siliconix | |
| Product Type | MOSFET | |
| Channel Type | Type P | |
| Maximum Continuous Drain Current Id | 2.68A | |
| Maximum Drain Source Voltage Vds | 20V | |
| Package Type | SC-70 | |
| Series | TrenchFET | |
| Mount Type | Surface | |
| Pin Count | 6 | |
| Maximum Drain Source Resistance Rds | 200mΩ | |
| Channel Mode | Enhancement | |
| Forward Voltage Vf | -1.2V | |
| Typical Gate Charge Qg @ Vgs | 4.2nC | |
| Maximum Gate Source Voltage Vgs | 8 V | |
| Maximum Power Dissipation Pd | 13.6W | |
| Minimum Operating Temperature | -55°C | |
| Maximum Operating Temperature | 175°C | |
| Width | 1.35 mm | |
| Standards/Approvals | No | |
| Length | 2.2mm | |
| Height | 1mm | |
| Automotive Standard | AEC-Q101 | |
| Select all | ||
|---|---|---|
Brand Vishay Siliconix | ||
Product Type MOSFET | ||
Channel Type Type P | ||
Maximum Continuous Drain Current Id 2.68A | ||
Maximum Drain Source Voltage Vds 20V | ||
Package Type SC-70 | ||
Series TrenchFET | ||
Mount Type Surface | ||
Pin Count 6 | ||
Maximum Drain Source Resistance Rds 200mΩ | ||
Channel Mode Enhancement | ||
Forward Voltage Vf -1.2V | ||
Typical Gate Charge Qg @ Vgs 4.2nC | ||
Maximum Gate Source Voltage Vgs 8 V | ||
Maximum Power Dissipation Pd 13.6W | ||
Minimum Operating Temperature -55°C | ||
Maximum Operating Temperature 175°C | ||
Width 1.35 mm | ||
Standards/Approvals No | ||
Length 2.2mm | ||
Height 1mm | ||
Automotive Standard AEC-Q101 | ||
RoHS Status: Exempted
- COO (Country of Origin):
- CN
TrenchFET® power MOSFET
Related links
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