Vishay Single E 1 Type N-Channel Power MOSFET, 26 A, 500 V, 3-Pin TO-220AB SIHP25N50E-GE3

RS Stock No.:: 180-7790
Mfr. Part No.:: SIHP25N50E-GE3
Brand:: Vishay

Vishay Single E 1 Type N-Channel Power MOSFET, 26 A, 500 V, 3-Pin TO-220AB SIHP25N50E-GE3

Bulk discount available

Subtotal (1 pack of 5 units)*

Kr.170 22

(exc. VAT)

Kr.212 775

(inc. VAT)

FREE delivery for online orders over 500,00 kr

Temporarily out of stock

280 unit(s) shipping from 12. januar 2026

Need more? Click ‘Check delivery dates’ to find extra stock and lead times.

Units	Per unit	Per Pack*
5 - 45	Kr. 34,044	Kr. 170,22
50 - 120	Kr. 31,318	Kr. 156,59
125 - 245	Kr. 28,92	Kr. 144,60
250 - 495	Kr. 27,236	Kr. 136,18
500 +	Kr. 25,514	Kr. 127,57

*price indicative

RS Stock No.:: 180-7790
Mfr. Part No.:: SIHP25N50E-GE3
Brand:: Vishay

Specifications

Technical Reference

Legislation and Compliance

Product Details

Find similar products by selecting one or more attributes.

Select all	Attribute	Value
	Brand	Vishay
	Channel Type	Type N
	Product Type	Power MOSFET
	Maximum Continuous Drain Current Id	26A
	Maximum Drain Source Voltage Vds	500V
	Series	E
	Package Type	TO-220AB
	Pin Count	3
	Maximum Drain Source Resistance Rds	0.145Ω
	Typical Gate Charge Qg @ Vgs	86nC
	Maximum Power Dissipation Pd	250W
	Forward Voltage Vf	1.2V
	Minimum Operating Temperature	-55°C
	Maximum Gate Source Voltage Vgs	±30 V
	Transistor Configuration	Single
	Maximum Operating Temperature	150°C
	Height	6.71mm
	Width	10.52 mm
	Standards/Approvals	RoHS
	Length	14.4mm
	Number of Elements per Chip	1
	Automotive Standard	No

	Select all
	Brand Vishay
	Channel Type Type N
	Product Type Power MOSFET
	Maximum Continuous Drain Current Id 26A
	Maximum Drain Source Voltage Vds 500V
	Series E
	Package Type TO-220AB
	Pin Count 3
	Maximum Drain Source Resistance Rds 0.145Ω
	Typical Gate Charge Qg @ Vgs 86nC
	Maximum Power Dissipation Pd 250W
	Forward Voltage Vf 1.2V
	Minimum Operating Temperature -55°C
	Maximum Gate Source Voltage Vgs ±30 V
	Transistor Configuration Single
	Maximum Operating Temperature 150°C
	Height 6.71mm
	Width 10.52 mm
	Standards/Approvals RoHS
	Length 14.4mm
	Number of Elements per Chip 1
	Automotive Standard No

Datasheet

COO (Country of Origin):: CN

Vishay MOSFET

The Vishay through-hole mount N-channel TO-220AB-3 MOSFET is a new age product with a drain-source voltage of 500V and a maximum gate-source voltage of 30V. It has a drain-source resistance of 145mohms at a gate-source voltage of 10V. It has a maximum power dissipation of 250W and continuous drain current of 26A. It has a driving voltage of 10V. This product has been optimized for lower switching and conduction losses. The MOSFET offers excellent efficiency along with a long and productive life without compromising performance or functionality.

Features and Benefits

• Low figure-of-merit (FOM): Ron x Qg

• Low gate charge (Qg)

• Low input capacitance (Ciss)

• Operating temperature ranges between -55°C and 150°C

• Reduced switching and conduction losses

Applications

• Hard switched topologies

• PC silver box/ATX power supplies

• Power factor correction power supplies (PFC)

• Switch mode power supplies (SMPS)

• Two-stage LED lighting

Certifications

• ANSI/ESD S20.20:2014

• BS EN 61340-5-1:2007

• UIS tested