Vishay Type P-Channel Power MOSFET, 110 A, 80 V, 3-Pin TO-263 SUM110P08-11L-E3

Subtotal (1 pack of 2 units)*

Kr. 113,71

(exc. VAT)

Kr. 142,138

(inc. VAT)

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Units
Per unit
Per Pack*
2 +Kr. 56,855Kr. 113,71

*price indicative

Packaging Options:
RS Stock No.:
180-7977
Mfr. Part No.:
SUM110P08-11L-E3
Brand:
Vishay
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Brand

Vishay

Channel Type

Type P

Product Type

Power MOSFET

Maximum Continuous Drain Current Id

110A

Maximum Drain Source Voltage Vds

80V

Package Type

TO-263

Mount Type

Surface

Pin Count

3

Maximum Drain Source Resistance Rds

0.0112Ω

Typical Gate Charge Qg @ Vgs

85nC

Maximum Power Dissipation Pd

375W

Minimum Operating Temperature

-55°C

Maximum Operating Temperature

175°C

Length

15.875mm

Standards/Approvals

RoHS

Automotive Standard

No

Vishay MOSFET


The Vishay MOSFET is a P-channel, TO-263-3 package is a new age product with a drain-source voltage of 80V and maximum gate-source voltage of 20V. It has a drain-source resistance of 11.2mohm at a gate-source voltage of 10V. The MOSFET has a maximum power dissipation of 375W. This product has been optimized for lower switching and conduction losses. The MOSFET offers excellent efficiency along with a long and productive life without compromising performance or functionality.

Features and Benefits


• Lead (Pb) free component

• Operating temperature ranges between -55°C and 175°C

• TrenchFET power MOSFET

Applications


• Adaptor switches

• DC/DC primary switches

• Load switches

• Power management

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