Vishay Single 1 Type N-Channel MOSFET, 42 A, 100 V, 8-Pin PowerPAK SO-8L SQJ488EP-T1_GE3

Subtotal (1 pack of 10 units)*

Kr.114 22 

(exc. VAT)

Kr.142 78 

(inc. VAT)

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  • Plus 2 980 left, shipping from 16. januar 2026
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Per unit
Per Pack*
10 +Kr. 11,422Kr. 114,22

*price indicative

Packaging Options:
RS Stock No.:
180-8020
Mfr. Part No.:
SQJ488EP-T1_GE3
Brand:
Vishay
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Brand

Vishay

Product Type

MOSFET

Channel Type

Type N

Maximum Continuous Drain Current Id

42A

Maximum Drain Source Voltage Vds

100V

Package Type

PowerPAK SO-8L

Pin Count

8

Maximum Drain Source Resistance Rds

0.021Ω

Maximum Gate Source Voltage Vgs

±20 V

Maximum Power Dissipation Pd

83W

Forward Voltage Vf

1.2V

Minimum Operating Temperature

-55°C

Typical Gate Charge Qg @ Vgs

27nC

Maximum Operating Temperature

175°C

Transistor Configuration

Single

Length

5.25mm

Standards/Approvals

AEC-Q101

Height

1.14mm

Width

6.25 mm

Number of Elements per Chip

1

Automotive Standard

AEC-Q101

COO (Country of Origin):
CN
The Vishay SQJ457EP is a automotive N-channel 175°C maximum junction temperature MOSFET having drain to source(Vds) voltage of 100V. The gate to source voltage(VGS) is 20V. It is having Power PAK SO-8L package. It offers drain to source resistance (RDS.) 0.021ohms at 10VGS and 0.0258ohms at 4.5VGS. Maximum drain current 42A.

Trench FET power MOSFET

AEC-Q101 qualified

100 % Rg and UIS tested

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