Specifications

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Product Details

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Select all	Attribute	Value
	Brand	onsemi
	Channel Type	Type N
	Product Type	MOSFET
	Maximum Continuous Drain Current Id	124A
	Maximum Drain Source Voltage Vds	100V
	Series	FDMS86181
	Package Type	PQFN
	Mount Type	Surface
	Pin Count	8
	Maximum Drain Source Resistance Rds	12mΩ
	Channel Mode	Enhancement
	Maximum Gate Source Voltage Vgs	20 V
	Minimum Operating Temperature	-55°C
	Typical Gate Charge Qg @ Vgs	42nC
	Forward Voltage Vf	1.2V
	Maximum Power Dissipation Pd	125W
	Maximum Operating Temperature	150°C
	Height	1.05mm
	Width	5 mm
	Length	5.85mm
	Standards/Approvals	No
	Automotive Standard	No

	Select all
	Brand onsemi
	Channel Type Type N
	Product Type MOSFET
	Maximum Continuous Drain Current Id 124A
	Maximum Drain Source Voltage Vds 100V
	Series FDMS86181
	Package Type PQFN
	Mount Type Surface
	Pin Count 8
	Maximum Drain Source Resistance Rds 12mΩ
	Channel Mode Enhancement
	Maximum Gate Source Voltage Vgs 20 V
	Minimum Operating Temperature -55°C
	Typical Gate Charge Qg @ Vgs 42nC
	Forward Voltage Vf 1.2V
	Maximum Power Dissipation Pd 125W
	Maximum Operating Temperature 150°C
	Height 1.05mm
	Width 5 mm
	Length 5.85mm
	Standards/Approvals No
	Automotive Standard No

Datasheet

COO (Country of Origin):: PH

This N-Channel MV MOSFET is produced using an advanced PowerTrench® process that incorporates Shielded Gate technology. This process has been optimized to minimise on-state resistance and yet maintain superior switching performance with best in class soft body diode.

Shielded Gate MOSFET Technology

Max rDS(on) = 4.2 mΩ at VGS = 10 V, ID = 44 A

Max rDS(on) = 12 mΩ at VGS = 6 V, ID = 22 A

ADD

50% lower Qrr than other MOSFET suppliers

Lowers switching noise/EMI

This product is general usage and suitable for many different applications.

onsemi FDMS86181 Type N-Channel MOSFET, 124 A, 100 V Enhancement, 8-Pin PQFN

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