DiodesZetex DMP2040USS Type P-Channel MOSFET, 7 A, 20 V Enhancement, 8-Pin SO-8 DMP2040USS-13
- RS Stock No.:
- 182-7049
- Mfr. Part No.:
- DMP2040USS-13
- Brand:
- DiodesZetex
Bulk discount available
Subtotal (1 pack of 50 units)*
Kr.205 75
(exc. VAT)
Kr.257 20
(inc. VAT)
FREE delivery for online orders over 500,00 kr
In Stock
- Plus 1 500 unit(s) shipping from 10. februar 2026
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Pack* |
|---|---|---|
| 50 - 200 | Kr. 4,115 | Kr. 205,75 |
| 250 - 450 | Kr. 3,617 | Kr. 180,85 |
| 500 - 950 | Kr. 3,519 | Kr. 175,95 |
| 1000 - 1950 | Kr. 3,427 | Kr. 171,35 |
| 2000 + | Kr. 3,345 | Kr. 167,25 |
*price indicative
- RS Stock No.:
- 182-7049
- Mfr. Part No.:
- DMP2040USS-13
- Brand:
- DiodesZetex
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | DiodesZetex | |
| Product Type | MOSFET | |
| Channel Type | Type P | |
| Maximum Continuous Drain Current Id | 7A | |
| Maximum Drain Source Voltage Vds | 20V | |
| Package Type | SO-8 | |
| Series | DMP2040USS | |
| Mount Type | Surface | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 52mΩ | |
| Channel Mode | Enhancement | |
| Maximum Power Dissipation Pd | 1.8W | |
| Maximum Gate Source Voltage Vgs | 12 V | |
| Minimum Operating Temperature | -55°C | |
| Typical Gate Charge Qg @ Vgs | 19nC | |
| Forward Voltage Vf | -1.2V | |
| Maximum Operating Temperature | 150°C | |
| Height | 1.5mm | |
| Width | 3.9 mm | |
| Length | 4.95mm | |
| Standards/Approvals | No | |
| Automotive Standard | AEC-Q101 | |
| Select all | ||
|---|---|---|
Brand DiodesZetex | ||
Product Type MOSFET | ||
Channel Type Type P | ||
Maximum Continuous Drain Current Id 7A | ||
Maximum Drain Source Voltage Vds 20V | ||
Package Type SO-8 | ||
Series DMP2040USS | ||
Mount Type Surface | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 52mΩ | ||
Channel Mode Enhancement | ||
Maximum Power Dissipation Pd 1.8W | ||
Maximum Gate Source Voltage Vgs 12 V | ||
Minimum Operating Temperature -55°C | ||
Typical Gate Charge Qg @ Vgs 19nC | ||
Forward Voltage Vf -1.2V | ||
Maximum Operating Temperature 150°C | ||
Height 1.5mm | ||
Width 3.9 mm | ||
Length 4.95mm | ||
Standards/Approvals No | ||
Automotive Standard AEC-Q101 | ||
- COO (Country of Origin):
- CN
This new generation MOSFET is designed to minimize the on-state resistance (RDS(ON)) and yet maintain superior switching performance, making it ideal for high efficiency power management applications.
Low On-Resistance
Low Gate Threshold Voltage
Low Input Capacitance
Fast Switching Speed
Low Input/Output Leakage
Totally Lead-Free
Halogen and Antimony Free. “Green” Device.
Applications
Backlighting
Power Management Functions
DC-DC Converters
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